Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory
Xiaomin Liu,Shuxia Ren,Zhenhua Li,Jiajun Guo,Shenghui Yi,Zheng Yang,Weizhong Hao,Rui Li,Jinjin Zhao
DOI: https://doi.org/10.1002/adfm.202202951
IF: 19
2022-05-27
Advanced Functional Materials
Abstract:A flexible transparent CsPbBr3 quantum dots (QDs) mixed in graphene oxide (GO) resistive switching memory is prepared. The devices exhibit an ultrahigh ON/OFF ratio of ≈1.4 × 107 under illumination, increasing by 1077 times than that in the dark. As a flexible memory device, the resistances of the Ag/CsPbBr3 QDs:GO/ITO device are little affected by the bending curvatures and load‐cycling. Perovskite resistive random‐access memory (RRAM) is a promising candidate for next‐generation logic, adaptive and nonvolatile memory devices, because of its high ON/OFF ratio, low‐cost fabrication, and good photoelectric regulation performance. In this work, a flexible transparent CsPbBr3 quantum dots (QDs) mixed in graphene oxide (GO) RRAM device is introduced, which is controllable by both an electric field and illumination. Under illumination, the ON/OFF ratio of the Ag/CsPbBr3 QDs:GO/ITO device is ≈1.4 × 107, which is 1077 times larger than that in the dark condition (1.3 × 104). The SET/RESET voltages are +2.28/−2.04 V and +1.68/−1.08 V under the dark and illumination conditions, respectively. As a flexible memory device, the resistances are little affected by the bending curvatures and load‐cycling. Before and after 104 bending cycles with a radius of 5 mm under illumination, the ON/OFF ratios keep in the same order, which are 2.5 × 107 and 2.3 × 107, respectively. The ratio values are 8.8 × 104 and 2.9 × 104 under the dark condition, respectively. This innovative resistive memory based on the CsPbBr3 QDs:GO hybrid film supports a huge space for the development of photoelectrical dual‐controlled flexible RRAM devices.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology