Effect of Polarization-Memory in SrTiO3/La0.9Sr0.1MnO3 Multilayer on Si Substrate

Yingtang Zhang,Yiming Zhang,Shengtao Li
DOI: https://doi.org/10.1063/1.3476358
IF: 4
2010-01-01
Applied Physics Letters
Abstract:SrTiO3/La0.9Sr0.1MnO3 (STO/LSMO) multilayer was fabricated on n-Si (100) substrate by using a computer-controlled laser molecular-beam epitaxy technique. A rectifying behavior was observed in the multilayer. Meanwhile, the capancitance-voltage (C-V) characteristics were investigated, which reveals a hysteresis memory effect in forward and backward bias regions. A detail study suggests that the hysteresis behaviors originate from the cooperation and competition between the interfacial polarization and trapping/detrapping mechanisms. Our results are expected to meet the high desire of the optimization and device design of random access memory.
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