Recent Developments on High Curie Temperature PIN-PMN-PT Ferroelectric Crystals.
Shujun Zhang,Fei Li,Nevin P. Sherlock,Jun Luo,Hyeong Jae Lee,Ru Xia,Richard J. Meyer,Wesley Hackenberger,Thomas R. Shrout
DOI: https://doi.org/10.1016/j.jcrysgro.2010.11.043
IF: 1.8
2010-01-01
Journal of Crystal Growth
Abstract:Pb(In0.5Nb0.5)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage temperatures range (>30°C) and coercive fields (∼5kV/cm), meanwhile maintaining similar electromechanical couplings (k33>90%) and piezoelectric coefficients (d33∼1500pC/N), when compared to their binary counterpart Pb(Mg1/3Nb2/3)O3–PbTiO3. In this article, we reviewed recent developments on the PIN–PMN–PT single crystals, including the Bridgman crystal growth, dielectric, electromechanical, piezoelectric and ferroelectric behaviors as functions of temperature and dc bias. Mechanical quality factor Q was studied as a function of orientation and phase. Of particular interest is the dynamic strain, which related to the Q and d33, was found to be improved when compared to the binary system, exhibiting the potential usage of PIN–PMN–PT in high power application. Furthermore, PIN–PMN–PT crystals exhibit improved thickness dependent properties, due to their small domain size, being on the order of 1μm. Finally, the manganese acceptor dopant in the ternary crystals was investigated and discussed briefly in this paper.