Growth And Properties Of Some Relaxor-Based Ferroelectric Single Crystals With High Curie Temperature By The Solution Bridgman And Modified Bridgman Techniques

Guislieng Xu,Danfeng Yang,Kai Chen,Xiaofeng Wang,Junbao Li
DOI: https://doi.org/10.1109/ULTSYM.2006.60
2006-01-01
Abstract:The solution Bridgman technique and modified Bridgman one have been used to grow the binary system 0.65Pb(In1/2Nb1/2)O-3-0.35 PbTiO3 (starting composition) and ternary system 0.28Pb(In1/2Nb1/2)O-3-0.40Pb(Mg1/3Nb2/3) O-3-0.32PbTiO(3) single crystals, respectively. The obtained PINT66/34 crystals show high T-c (269 degrees C), T-rt (134 degrees C) and good piezoelectric properties (d(33)similar to 2000pC/N) on the (001) cuts. Whereas, the as-grown PIMNT single crystals have reached the size of phi 45mmx80mm boules and 25x25x1mm wafers. The large PIMNT crystals exhibit not only ultrahigh piezoelectric properties (d(33)similar to 1700-2200pC/N, epsilon similar to 5000 and k(33)similar to 92%) on (001)-cuts, but also higher Curie temperature (T-c>190 degrees C), higher rhombohedral-tetragonal transition temperature (T-rt similar to 120 degrees C) and higher coercive field (E-c similar to 10.88kV/cm) than PMNT or PZNT crystals near their morphotropic phase boundary.
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