Abstract:Ge-Sb-Te-based phase-change memory is one of the most promising candidates to succeed the current flash memories. The application of phase-change materials for data storage and memory devices takes advantage of the fast phase transition (on the order of nanoseconds) and the large property contrasts (e.g., several orders of magnitude difference in electrical resistivity) between the amorphous and the crystalline states. Despite the importance of Ge-Sb-Te alloys and the intense research they have received, the possible phases in the temperature-pressure diagram, as well as the corresponding structure-property correlations, remain to be systematically explored. In this study, by subjecting the amorphous Ge(2)Sb(2)Te(5) (a-GST) to hydrostatic-like pressure (P), the thermodynamic variable alternative to temperature, we are able to tune its electrical resistivity by several orders of magnitude, similar to the resistivity contrast corresponding to the usually investigated amorphous-to-crystalline (a-GST to rock-salt GST) transition used in current phase-change memories. In particular, the electrical resistivity drops precipitously in the P = 0 to 8 GPa regime. A prominent structural signature representing the underlying evolution in atomic arrangements and bonding in this pressure regime, as revealed by the ab initio molecular dynamics simulations, is the reduction of low-electron-density regions, which contributes to the narrowing of band gap and delocalization of trapped electrons. At P > 8 GPa, we have observed major changes of the average local structures (bond angle and coordination numbers), gradually transforming the a-GST into a high-density, metallic-like state. This high-pressure glass is characterized by local motifs that bear similarities to the body-centered-cubic GST (bcc-GST) it eventually crystallizes into at 28 GPa, and hence represents a bcc-type polyamorph of a-GST.

Pressure-induced Crystallization of Amorphous Ge2Sb2Te5

The Amorphization and Crystallization of Ge 2 Sb 2 Te 5 : an Ab Initio Molecular Dynamics Study

Pressure-induced reversible amorphization and an amorphous–amorphous transition in Ge <sub>2</sub> Sb <sub>2</sub> Te <sub>5</sub> phase-change memory material

High-pressure Structural Phase Transition and Metallization in Ga2S3 under Non-Hydrostatic and Hydrostatic Conditions Up to 36.4 GPa

A Body-Centered-Cubic Polymorph of the Ge2sb2te5 Phase Change Alloy

Pressure Induced Short-Range Structural Changes in Supercooled Liquid Ge2Sb2Te5

Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy

Pressure-induced Reversible Amorphization and an Amorphous–amorphous Transition in Ge 2 Sb 2 Te 5 Phase-Change Memory Material

Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 Up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Structural and electronic transformations of GeSe2 glass under high pressures studied by X-ray absorption spectroscopy

Pressure-induced reversible structural phase transitions and metallization in GeTe under hydrostatic and non-hydrostatic environments up to 22.9 GPa

Ab Initio Molecular Dynamics: Disorder Control in Crystalline GeSb2Te4 Using High Pressure (adv. Sci. 8/2015)

Pressure-Induced Changes in the Crystal Structure and Electrical Conductivity of GeV 4 S 8

Crystallization Properties of the Ge2Sb2Te5 Phase‐Change Compound from Advanced Simulations

Ultrafast Crystallization Mechanism of Amorphous Ge15Sb85 Unraveled by Pressure-Driven Simulations

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Universal amorphous-amorphous transition in GexSe1-x glasses under pressure

Elastic Properties Of Single Crystal Hydrogen Sulfide: A Brillouin Scattering Study Under High Pressure-Temperature

Pressure-Induced Amorphization and Recrystallization of Sni2

Pressure-induced Amorphization of Crystalline Silica

Pressure-induced Metallization in the Absence of a Structural Transition in the Layered Ferromagnetic Insulator Cr2Ge2Te6