Calculation of Positron Lifetime of Compound Semiconductors

Chen Xiang-Lei,Zhang Jie,Du Huai-Jiang,Zhou Xian-Yi,Ye Bang-Jiao
DOI: https://doi.org/10.7498/aps.59.603
IF: 0.906
2010-01-01
Acta Physica Sinica
Abstract:On the basis of of local density approximation (LDA) and general gradient approximation (GGA), positron annihilation information has been calculated for five types of compound semiconductors, which are ZnO, GaN, GaAs, SiC and InP. The calculated information includes distribution of positron density, distribution of positron annihilation rate density, positron bulk lifetime, positron monovacancy lifetime and positron divacancy lifetime.
What problem does this paper attempt to address?