Abstract:Over the past few years, wide and direct band gap semiconductors have been intensively studied for their application as blue and ultraviolet light emitters. As a wide gap semiconductor, ZnO has a wide band gap (3.37 eV) and a large binding energy (60 meV). Therefore, ZnO is considered as one of the most promising candidates for short wavelength optoelectronics devices, and it is very important to conduct further studies of the properties of ZnO thin films.In this paper, indium-doped zinc oxides was prepared by radio frequency (rf) reactive co-sputtering on silicon (100) substrate at 430 ℃. Sputtering target were consist of metal zinc (99.99%) and metal indium (99%). Indium content is about 3% (the ratio of indium slices area to that of whole target) on the target. The sputtering gas is a mixture gas of argon (99.97%) and oxygen (99.95%), the partial pressure ratio of oxygen is 0.4. The structure, surfaces morphology, type of conductivity, electrical resistivity and PL spectra of the sample were characterized by X-ray diffractometer, scanning electron microscopy, hot probe, four-point probe and fluorescent spectrophotometer, respectively. There are four main ZnO diffraction peaks in the glancing angle X-ray diffraction patterns, and no diffraction peaks of In_2O_3 or Zn_2In_2O_5 are observed. Therefore, we think that polycrystalline ZnO thin films was prepared by RF reactive co-sputtering . The θ-2θ scan mode X-ray diffraction patterns indicated that the film has highly c-axis orientation and low biaxial compressive stress (0.74 GPa). The 2θ angles of (002) diffraction peak is 34.48° and the full width at half maximum is 0.376°. The surface of the sample was smooth and flat. Compared with un-doped ZnO thin films, low resistivity (1.6 Ω·cm) n-type ZnO thin film was deposited on silicon (100) by doped indium. The blue-violet photoluminescence bi-peak located at 415 nm and at 433 nm is observed when exited with 340 nm wavelength in the photoluminescence (PL) spectrum at room temperature. In this paper, we think that the peak at 415 nm comes from In impurity defects and the peak at 433 nm originates from Zn interstitial defects.

The preparation, electrical and optical properties of indium doped ZnO conductive nanoparticles

Surface Pattern and Optical Properties of In-doped ZnO Thin Films by Hydrothermal Method

Structural, Electrical, and Optical Properties of ZnInO Alloy Thin Films

Improvement of structural, optical and electrical properties of indium-doped ZnO nanoparticles synthesized by Co-precipitation method

Study of Undoped and Indium Doped ZnO Thin Films Deposited by Sol Gel Method

Role of indium doping on structural and electrical properties of ZnO nanoparticles prepared by sol–gel method

Optical Properties of Indium-Doped ZnO Films

Conductivity Enhancement by Slight Indium Doping in ZnO Nanowires for Optoelectronic Applications

Electronic Transport Properties of In-doped ZnO Nanobelts with Different Concentration

Preparation of indium-doped zinc oxide nanoparticles by pulsed laser ablation in liquid technique and their characterization

Properties of Low Indium Content Al Incorporated Izo (indium Zinc Oxide) Deposited at Room Temperature

One-Pot Synthesis and Optical Properties of In- and Sn-Doped Zno Nanoparticles

Effects of Indium Doping on the Crystallographic, Morphological, Electrical, and Optical Properties of Highly Crystalline ZnO Films

Investigation of Indium Oxide Nanowire Transform to Indium Zinc Oxide (IZO) Via Solid State Reactions

Effects of Indium Incorporation on the Optical Properties of ZnO Films

Tunable surface plasmon resonance and enhanced electrical conductivity of In doped ZnO colloidal nanocrystals

Field Emission Properties of Indium-Doped ZnO Nanowires Prepared on ITO Glass Substrate

Study of Electrical and Optical Properties of Transparent Conductive In-doped ZnO Thin Films

The Electrical Stability of In-doped ZnO Thin Films Deposited by RF Sputtering

Preparation of In-doped ZnO Films on Si Substrates Using Radio Frequency (rf) Reactive Co-sputtering Technique

Physical Properties and Growth Kinetics of Co-Sputtered Indium-Zinc Oxide Films