Characterization and Properties of ZnO1−xSx Alloy Films Fabricated by Radio-Frequency Magnetron Sputtering

H. L. Pan,T. Yang,B. Yao,R. Deng,R. Y. Sui,L. L. Gao,D. Z. Shen
DOI: https://doi.org/10.1016/j.apsusc.2010.02.061
IF: 6.7
2010-01-01
Applied Surface Science
Abstract:A series of ZnO1−xSx alloy films (0≤x≤1) were grown on quartz substrates by radio-frequency (rf) magnetron sputtering of ZnS ceramic target, using oxygen and argon as working gas. X-ray diffraction measurement shows that the ZnO1−xSx films have wurtzite structure with (002) preferential orientation in O-rich side (0≤x≤0.23) and zinc blende structure with (111) preferential orientation in S-rich side (0.77≤x≤1). However, when the S content is in the range of 0.23<x<0.77, the ZnO1−xSx film consists of two phases of wurtzite and zinc blende or amorphous ZnO1−xSx phase. The band gap energy of the films shows non-linear dependence on the S content, with an optical bowing parameter of about 2.9eV. The photoluminescence (PL) measurement reveals that the PL spectrum of the wurtzite ZnO1−xSx is dominated by visible band and its PL intensity and intensity ratio of UV to visible band decrease greatly compared with undoped ZnO. All as-grown ZnO1−xSx films behave insulating, but show n-type conductivity for w-ZnO1−xSx and maintain insulating properties for β-ZnO1−xSx after annealed. Mechanisms of effects of S on optical and electrical properties of the ZnO1−xSx alloy are discussed in the present work.
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