Abstract:We have measured the polarized x-ray-absorption spectra at the Cu K edge of ${\mathrm{Nd}}_{2\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ce}}_{\mathit{x}}$${\mathrm{CuO}}_{4\mathrm{\ensuremath{-}}\mathrm{\ensuremath{\delta}}}$ single crystals and the unpolarized spectra of ${\mathit{R}}_{2\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ce}}_{\mathit{x}}$${\mathrm{CuO}}_{4\mathrm{\ensuremath{-}}\mathrm{\ensuremath{\delta}}}$ (R=Pr, Nd, Sm, Eu, and Gd) ceramic samples. The results indicate that up to the T '-phase stability limit (and including the narrow region of superconductivity), Ce doping continuously donates electrons into the Cu 3d orbitals. Our results evidence a ${\mathrm{Cu}}^{1+}$ content in these T '-phase materials which increases almost linearly with the Ce-doping level x, and an electron doping fraction from each Ce atom to Cu which is quite close to unity (except in the R=Gd series). It is found that the size variation of the rare-earth elements R causes a number of feature changes in the Cu K edge, including an about 0.5 eV upward edge shift. These effects are explained by the ligand field shift of the unoccupied Cu 4p and 3d bands. A cluster model description has been developed to correlate the spectral features of the Cu K-edge spectra to different 3d configurations. The experimental results can be well described by the following model parameters: Cu 1s-3d Coulomb interaction ${\mathit{U}}_{\mathit{c}\mathit{d}}$\ensuremath{\sim}6.5 eV, Cu 1s-O 2p Coulomb interaction ${\mathit{U}}_{\mathit{c}\mathit{L}}$\ensuremath{\sim}1.1 eV, d-ligand hybridization V\ensuremath{\sim}2.7 eV, Cu\ensuremath{\leftrightarrows}O charge-transfer energy \ensuremath{\Delta}\ensuremath{\sim}1.3 eV (at x=0), and \ensuremath{\Delta}\ensuremath{\sim}0.5 eV (at x=0.2).

Thermodynamic Reconsiderations on Electronic Properties of Pure- and Doped-Ceria

Anomalous Conductivity and Microstructure in Gadolinium Doped Ceria Prepared from Nano-Sized Powder

Electrical and Ionic Conductivity of Gd-Doped Ceria

Electronic Conductivity Of 10-40 Mol % Yo(1.5)-Doped Ceo(2)

Electronic Conductivity of Pure Ceria

Electronic Conductivity of 10–40 mol % YO[sub 1.5]-Doped CeO[sub 2]

Thermomechanical Properties of Non-Stoichiometric Gadolinium Doped Ceria by Molecular Dynamics Simulations

in situ observation of reversible phase transitions in Gd-doped ceria driven by electron beam irradiation

Infrared Emissivity Behavior of Doped CeO2 at High Temperature

X-ray-absorption Studies of Electron Doping and Band Shifts Inr2−x…

Influence of Rare-Earth Doping Content and Type on Phase Transformation and Transport Properties in Highly Doped CeO2

Electronic Conductivity of CeO[sub 2]: Its Dependence on Oxygen Partial Pressure and Temperature

In-Situ Transmission Electron Microscopy Study of Oxygen Vacancy Ordering and Dislocation Annihilation in Undoped and Sm-Doped Ceo2 Ceramics During Redox Processes

Study on Multi-Doped Ceria-Based Solid Electrolytes

Electronic Conductivity of 20 Mol % Yo1.5 Doped Ceo2

Electronic, Magnetic and Optical Properties of C- and N-doped CeO2 Bulk and (111) Surface from First-Principles

Optical and microstructural characterization of Er$^{3+}$ doped epitaxial cerium oxide on silicon

Electronic excitation spectra of cerium oxides: from ab initio dielectric response functions to Monte Carlo charge transport simulations

Enhanced mass diffusion phenomena in highly defective doped ceria

Insight into the Mechanism of the Ionic Conductivity for Ln-Doped Ceria (ln = La, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, and Tm) Through First-Principles Calculation.

Electrical Properties of Ceria Co-doped with Sm3+ and Nd3+