Electronic Conductivity of Pure Ceria

Yue-Ping Xiong,Haruo Kishimoto,Katsuhiko Yamaji,Masashi Yoshinaga,Teruhisa Horita,Manuel E. Brito,Harumi Yokokawa
DOI: https://doi.org/10.1016/j.ssi.2010.07.017
IF: 3.699
2011-01-01
Solid State Ionics
Abstract:The electronic conductivity of pure ceria with two different impurity levels is examined by dc polarization technique based on the Hebb–Wagner ion blocking method. The impurity level for the ceria with 99.999% purity (5N-CeO2) is about 1/100 of that with 99.9% purity (3N-CeO2) as confirmed by the fluorescence intensity of impurities obtained by Raman spectroscopy. The electronic conductivity for the 5N-CeO2 was measured at T=973K to 1173K, and the results are essentially the same as those for the 3N-CeO2. The electronic conductivity increases with decreasing of P(O2) following slope values of −1/4 to −1/6. The −1/4 dependent region becomes narrower for the 5N-CeO2 than that for the 3N-CeO2. For both types of ceria, the P(O2) independent region appears in the same region of higher than 10−2 and 10−3MPa at T=1073K and 973K, respectively. Activation energies for the 5N-CeO2 were 2.2eV, 2.6eV and 1.9eV in P(O2) dependent regions of −1/6, −1/4 and 0, respectively.
What problem does this paper attempt to address?