Abstract:Efficient and controlled charge transport in networks of semiconducting single-walled carbon nanotubes is the basis for their application in electronic devices, especially in field-effect transistors and thermoelectrics. The recent advances in selective growth, purification, and sorting of semiconducting and even monochiral carbon nanotubes have enabled field-effect transistors with high carrier mobilities and on/off current ratios that were impossible a few years ago. They have also allowed researchers to examine the microscopic interplay of parameters such as nanotube length, density, diameter distribution, carrier density, intentional and unintentional defects, dielectric environment, etc., and their impact on the macroscopic charge transport properties in a rational and reproducible manner. This review discusses various models that are considered for charge transport in nanotube networks and the experimental methods to characterize and investigate transport beyond simple conductivity or transistor measurements. Static and dynamic absorption, photoluminescence and electroluminescence spectroscopy, as well as scanning probe techniques (e.g., conductive atomic force microscopy, Kelvin probe force microscopy), and their unique insights in the distribution of charge carriers in a given nanotube network and the resulting current pathways will be introduced. Finally, recommendations for further optimization of nanotube network devices and a list of remaining challenges are provided.

Charge-Injection-Induced Time Decay in Carbon Nanotube Network-Based Fets

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Investigation on self-heating effect in carbon nanotube field-effect transistors

Circuit Modeling and Time Delay Analysis of Double-Walled Carbon Nanotube Interconnects

High-Frequency Analysis of Cu-Carbon Nanotube Composite Through-Silicon Vias

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Time-Dependent Transport in Nanoscale Devices

Simulation Of Time-Dependent Transport In Nanoscaled Devices

Insight into Ballisticity of Room-Temperature Carrier Transport in Carbon Nanotube Field-Effect Transistors

A Compact Physical Drain Current Model of Multitube Carbon Nanotube Field Effect Transistor Including Diameter Dispersion Effects

A Non-Quasi-Static Model for Tunneling FETs Based on the Relaxation Time Approximation

Time-Dependent Current Distributions of a Two-Terminal Carbon Nanotube-Based Electronic Device

Transient Response of Carbon Nanotube Integrated Circuits

Memory Effects of Carbon Nanotube-Based Field Effect Transistors

Hyperfine and spin-orbit coupling effects on decay of spin-valley states in a carbon nanotube

A simple drain current model for Schottky-barrier carbon nanotube field effect transistors

Charge sensing in carbon nanotube quantum dots on microsecond timescales

Study Of Charge Diffusion At The Carbon Nanotube-Sio2 Interface By Electrostatic Force Microscopy

Charge transport in semiconducting carbon nanotube networks

Quantum Interference in Carbon-Nanotube Electron Resonators.

Self-aligned U-gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering.