Abstract:Novel strategies for printed electronic devices have rapidly evolved, particularly using thin films of inorganic semiconductors for high‐performance. As one of the basic electronic components, diodes provide important functionalities in circuits, such as high‐frequency switching and rectifying. In this report, the fabrication of releasable radio frequency (RF) gallium arsenide (GaAs)‐based Schottky diodes is presented. This technique yields thousands of fully formed diodes with uniform performance densely packed onto a wafer piece, where each diode is released and transferred using a micro‐stamp only when needed. Such production technique not only reduces material cost, but also benefits design efforts, as circuit designing often requires iterative designs with incremental changes. With low forward voltage and fast switching action, these printable forms of Schottky diodes are operable at microwave frequencies for diverse circuit applications. A full wave bridge rectifier, popularly used for RF‐to‐direct current (DC) converting circuit in wireless power transmission, is fabricated on a flexible substrate using four printed Schottky diodes. The results reveal successful RF‐to‐DC conversion with efficiency of up to 36.4% at principle frequency bands of mobile electronics, including cellular networks, Bluetooth, and Wi‐Fi. The methods presented in this work form a simple yet robust path toward advanced high‐performance flexible electronics. Releasable high‐performance gallium arsenide–based Schottky diodes offer superior design advantages and flexibility for electronics circuit engineers. The fabrication of thousands of releasable diodes with consistent state‐of‐the‐art performance parameters is presented. A full bridge rectifier built on a flexible substrate with the printed diodes exhibits exceptional radio frequency to direct current conversion efficiency in the super high‐frequency band (1–7 GHz).

Design and fabrication of planar GaAs Schottky barrier diodes for submillimeter-wave applications

Design and Optimizing of Trench Schottky Barrier-Controlled Β-Ga2o3 Schottky Diode with Low Turn-on Voltage and Leakage Current

Fabrication and Characterization of 8.87 THz Schottky Barrier Mixer Diodes for Mixer

Gan Planar Schottky Barrier Diode with Cut-Off Frequency of 627 Ghz

Design and Optimization of Planar Mesa Termination for Diamond Schottky Barrier Diodes

Multi-channel AlGaN/GaN Schottky barrier diodes with a half through-hole

Development and Modelling of Gallium Nitride Based Lateral Schottky Barrier Diodes with Anode Recesses for mmWave and THz Applications

DC and Analog/RF Investigation on Germanium Mosfet with Double-Schottky-barrier Source/drain

Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement

The Study of 0.34 Thz Monolithically Integrated Fourth Subharmonic Mixer Using Planar Schottky Barrier Diode

AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer

Ultrabroadband electrically controllable terahertz modulation based on GaAs Schottky diode structure

Modeling of Si Schottky Diodes and Its Application in THz Imaging

Design for the GaAs/GaAlAs cut-off waveguides modulator

An Equivalent-Circuit Model of Planar GaAs Schottky Diode for Terahertz Application

Fabrication and Modeling of Schottky Diode Integrated in Standard CMOS Process

1 Kv/1.3 Mω·cm2 Vertical GaN-on-GaN Schottky Barrier Diodes with High Switching Performance

Systematic Design and Parametric Analysis of GaN Vertical Trench MOS Barrier Schottky Diode With p-GaN Shielding Rings

Releasable High‐Performance GaAs Schottky Diodes for Gigahertz Operation of Flexible Bridge Rectifier

Design and Fabrication of Schottky Diode with Standard CMOS Process

Fabrication of Schottky Barrier Diodes of High Frequency Based on Thin Silicon Epilayer