Field-emission of TiSi2 thin film deposited by an in situ chloride-generated route

Yemin Hu,Ying Li,Mingyuan Zhu,Zheng Hu,Leshu Yu
DOI: https://doi.org/10.1116/1.3498742
2010-01-01
Abstract:Titanium disilicide (TiSi2) is a high-melting compound with excellent conductivity, which appears to have potential applications in field-emission. In the present article, TiSi2 thin film was successfully synthesized on a silicon wafer through an in situ chloride-generated strategy by atmospheric-pressure chemical-vapor deposition. The required titanium chloride-precursor vapor was in situ produced at an elevated temperature by preloading NiCl2 center dot 6H(2)O onto Ti powder with anhydrous ethanol. This synthetic strategy avoided inconvenience with the direct usage of titanium halide or titanium powder as delivering gaseous precursors. The field-emission behavior of the sample shows a turn-on field of 7.2 V/mu m and agrees well with the conventional Fowler-Nordheim theory. No obvious degradation was observed in a life-stability experiment period for over 100 min. The convenient and low-cost preparation of the TiSi2 thin film and its fine field-emission performance suggest that it can serve as a good candidate for a field emitter. c 2010 American Vacuum Society. [DOI: 10.1116/1.3498742]
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