Abstract:Titanium:sapphire (Ti:sapphire) lasers have been essential for advancing fundamental research and technological applications, including the development of the optical frequency comb 1 , two-photon microscopy 2 and experimental quantum optics 3,4 . Ti:sapphire lasers are unmatched in bandwidth and tuning range, yet their use is restricted because of their large size, cost and need for high optical pump powers 5 . Here we demonstrate a monocrystalline titanium:sapphire-on-insulator (Ti:SaOI) photonics platform that enables dramatic miniaturization, cost reduction and scalability of Ti:sapphire technology. First, through the fabrication of low-loss whispering-gallery-mode resonators, we realize a Ti:sapphire laser operating with an ultralow, sub-milliwatt lasing threshold. Then, through orders-of-magnitude improvement in mode confinement in Ti:SaOI waveguides, we realize an integrated solid-state (that is, non-semiconductor) optical amplifier operating below 1 μm. We demonstrate unprecedented distortion-free amplification of picosecond pulses to peak powers reaching 1.0 kW. Finally, we demonstrate a tunable integrated Ti:sapphire laser, which can be pumped with low-cost, miniature, off-the-shelf green laser diodes. This opens the doors to new modalities of Ti:sapphire lasers, such as massively scalable Ti:sapphire laser-array systems for several applications. As a proof-of-concept demonstration, we use a Ti:SaOI laser array as the sole optical control for a cavity quantum electrodynamics experiment with artificial atoms in silicon carbide 6 . This work is a key step towards the democratization of Ti:sapphire technology through a three-orders-of-magnitude reduction in cost and footprint and introduces solid-state broadband amplification of sub-micron wavelength light.

High Power Widely Tunable All-Solid-State Pulsed Titanium-Doped Sapphire Laser

High-Power and High-repetition-rate widely tunable Narrow-Linewidth low-gain-band Ti: Sapphire laser

A High-Pulse-Energy High-Beam-Quality Tunable Ti:Sapphire Laser Using a Prism-Dispersion Cavity

Generation of 4.5mw Femtosecond Pulse with A Compact All Solid-State Cavity-Dumped Ti : Sapphire Laser

Experimental Investigations and Rate-Equations of Quasi-Continuous Wave Laser Operation of Titanium-Doped Sapphire

Fiber-laser-pumped Ti:sapphire laser

High Pulse Energy, High Beam Quality Microsecond-Pulse Ti:sapphire Laser at 819.7 Nm

10 W injection-locked single-frequency continuous-wave titanium:sapphire laser

Ti : Sapphire Laser Pumped Cr4+,Nd3+: Yag Self-Q-Switched Microchip Laser

High beam quality narrow linewidth microsecond pulse Ti:sapphire laser operating at 819.710 nm

15 fs-pulse generation from a self-mode-locked Ti:sapphire laser with low pump power

Ti : Sapphire-Laser Pumped 20 At.% Yb : Yag Thin Chip With Continuous-Wave Laser Output Of 356 Mw At 1.053 Mu M

High-Average-Power Self-Starting Mode-Locked Ti : Sapphire Laser with A Broadband Semiconductor Saturable-Absorber Mirror

Efficient 1 GHz Ti:sapphire laser with improved broadband continuum in the infrared

Ti : Sapphire-Laser Pumped 20at%Yb : Yag Thin Chip With High Efficiency Cw Laser Output Of 1.053 Mu M

High-energy, high-peak-power diode-pumped Q-switched Tm:YAG laser at 2.02 μm with tunable repetition rate from 100 Hz to 1000 Hz

Photonic-circuit-integrated titanium:sapphire laser

Sub-pm linewidth, high pulse energy, high beam quality microsecond-pulse Ti:sapphire laser at 766.699 nm

Titanium:sapphire-on-insulator integrated lasers and amplifiers

Efficient amplification of a femtosecond Ti:sapphire laser with a ring regenerative amplifier

8-fs Pulse Generation from the Chirped Mirrors and Prism-pair Dispersion Controlled Ti: Sapphire Oscillator