Abstract:Reduced graphene oxide quantum dot (rGOQD) devices in formats of capacitor and thin film transistor (TFT) were demonstrated and examined as the first trial to achieve nonambipolar channel property. In addition, through a gold nanoparticle (Au NP) layer embedded between the rGOQD active channel and dielectric layer, memory capacitor and TFT performances were realized by capacitance-voltage (C-V) hysteresis and gate program, erase, and reprogram biases. First, capacitor structure of the rGOQD memory device was constructed to examine memory charging effect featured in hysteretic C-V behavior with a 30 nm dielectric layer of cross-linked poly(vinyl alcohol). For the intervening Au NP charging layer, self-assembled monolayer (SAM) formation of the Au NP was executed to utilize electrostatic interaction by a dip-coating process under ambient environments with a conformal fabrication uniformity. Second, the rGOQD memory TFT device was also constructed in the same format of the Au NPs SAMs on a flexible substrate. Characteristics of the rGOQD TFT output showed novel saturation curves unlike typical graphene-based TFTs. However, The rGOQD TFT device reveals relatively low on/off ratio of 101 and mobility of 5.005 cm2/V·s. For the memory capacitor, the flat-band voltage shift (ΔVFB) was measured as 3.74 V for ±10 V sweep, and for the memory TFT, the threshold voltage shift (ΔVth) by the Au NP charging was detected as 7.84 V. In summary, it was concluded that the rGOQD memory device could accomplish an ideal graphene-based memory performance, which could have provided a wide memory window and saturated output characteristics.

Multilayer stacked low-temperature-reduced graphene oxide films: preparation, characterization, and application in polymer memory devices.

Multilayer Stacked Low‐Temperature‐Reduced Graphene Oxide Films: Preparation, Characterization, and Application in Polymer Memory Devices

Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes

Reduced Graphene Oxide Electrodes with Wrinkled Surface for Nonvolatile Polymer Memory Device Compatibility

Organophosphorus-based Polymer Covalently Functionalized Reduced Graphene Oxide: In-situ Synthesis and Nonvolatile Memory Effect

Chemoselective reduction of graphene oxide and its application in nonvolatile organic transistor memory devices

Conjugated polymer-grafted reduced graphene oxide for nonvolatile rewritable memory.

Bodipy-Based Conjugated Polymer Covalently Grafted Reduced Graphene Oxide for Flexible Nonvolatile Memory Devices

In-situ Growing D-A Polymer from the Surface of Reduced Graphene Oxide: Synthesis and Nonvolatile Ternary Memory Effect

Solution-Processable 2D Polymer/Graphene Oxide Heterostructure for Intrinsic Low-Current Memory Device

Nonvolatile Rewritable Memory Effects in Graphene Oxide Functionalized by Conjugated Polymer Containing Fluorene and Carbazole Units

Fabrication of AIE Polymer-Functionalized Reduced Graphene Oxide for Information Storage

Fabrication of Flexible, All-Reduced Graphene Oxide Non-Volatile Memory Devices

High-Performance Resistance-Switchable Multilayers Of Graphene Oxide Blended With 1,3,4-Oxadiazole Acceptor Nanocomposite

Ferroelectric Domain Dynamics and Stability in Graphene Oxide-P(vdf-trfe) Multilayer Films for Ultra-High-density Memory Application

Characteristics of Reduced Graphene Oxide Quantum Dots for a Flexible Memory Thin Film Transistor

The preparation of water-dispersible graphene oxide/conjugated polymer nanocomposite and the nonvolatile resistive switching memory properties

Memory Devices Using a Mixture of MoS2 and Graphene Oxide as the Active Layer

Fabrication of Flexible, All‐Reduced Graphene Oxide Non‐Volatile Memory Devices

A New Reducing Agent to Prepare Single-Layer, High-Quality Reduced Graphene Oxide for Device Applications