Abstract:Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of Phi(M1)/Phi(M2) have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

Modeling and Optimizing of Carbon Nanotube Based CMOS Logic Circuit

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

CMOS-based carbon nanotube pass-transistor logic integrated circuits

A Compact Model of Carbon Nanotube Field-Effect Transistors for Various Sizes with Bipolar Characteristics

Design and Modeling of Carbon Nanotube Electromechanical Switches for Logic Device Application

An Improved Dual-Gate Compact Model for Carbon Nanotube Field Effect Transistors with a Back-Gate Effect and Circuit Implementation

Large-scale Integrated Circuits Simulation Based on CNT-FET Model

A Compact Model for Nanowire Tunneling-FETs

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

Modeling And Simulation Of Carbon Nanotube-Semiconductor Heterojunction Vertical Field Effect Transistors

Logic Ciucuits Using Solution-processed Single-walled Carbon Nanotue Transistors

Intel LVS Logic As a Combinational Logic Paradigm in CNT Technology

A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization

Artificial Neural Network Based CNTFETs Modeling

Optimization of a Nanoscale Operational Amplifier Based on a Complementary Carbon Nanotube Field-Effect Transistor by Adjusting Physical Parameters

Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based on Two-Layer Stacks of Single-Walled Carbon Nanotube Networks.

Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs

A Compact Model of Silicon-Based Nanowire Field Effect Transistor for Circuit Simulation and Design

An efficient design methodology for a tri-state multiplier circuit in carbon nanotube technology