Abstract:Silicon photoluminescence and lasing have been issues critical to breaking through bottlenecks in the understanding of luminescence mechanisms. Unfortunately, long-standing disputes about the exciton recombination mechanism and fluorescence lifetime remain unresolved, especially about whether silicon nanocrystals (Si NCs) can realize fast direct band gap-like optical transitions. Here, using ground-state and excited-state density functional theory (DFT), we obtained intrinsic phonon-free optical transitions at sizes from Si22 to Si705, showing that very small Si NCs can realize a strong direct optical transition. Orbital labeling results show that this rapid transition does not come from the T-T-like transition, contrary to the conclusions from the effective mass approximation, and that T-X mixing leads to a quasidirect band gap. This anomalous transition is particularly intense with decreasing size (or enhancement of quantum confinement). By investigating electron and hole distributions generated in the optical transition, localized state induced enhanced emission (LIEE) in Si NCs was proposed. Quantum confinement distorts the excited-state electron spatial distribution by localizing Bloch waves into the NC core, resulting in increased hole and electron overlap, thus inducing a fast optical process. This work resolves important debates and proposes LIEE to explain the anomalous luminescence-a phase transition from weak (or no) luminescent state to strong optical transition, which will aid attempts at realizing high radiative rate NC materials and application-level Si lasers.

Electronic States in Si Nanocrystal Thin Films

Electronic States in Hydrogenated Nanocrystalline Silicon Thin Films Detected by Photocurrent Technique

Photocurrent Response of Hydrogenated Nanocrystalline Silicon Thin Films

Photocurrent of Hydrogenated Nanocrystalline Silicon Thin Film/crystalline Silicon Heterostructure

Photocurrent Generated by Nanometer Silicon Crystallites

Electron localization and resonant tunneling in uniform nanocrystalline silicon quantum dot systems

Optoelectronic properties of hydrogenated nanocrystalline silicon thin films

Bias Effect in Photocurrent Response of Si Nanocrystals

Enhancement of Electron Mobility in Nanocrystalline Silicon∕crystalline Silicon Heterostructures

High Electron Mobility in Well Ordered and Lattice-Strained Hydrogenated Nanocrystalline Silicon

Avalanche-Like Electric-Field-Induced Photocurrent Gain in Resonant Tunneling Hydrogenated Nanocrystalline Silicon System

Structural Order Effect in Visible Photoluminescence Properties of Nanocrystalline Si : H Thin Films

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Microstructures and Characteristics of Nanosize Crystalline Silicon Films

Electroluminescense and photoluminescense of nano-crystalline Si:H films

Controlling the Electronic Band Structures in Hydrogenated Silicon Nanocrystals by Shallow Impurity Doping

AC electrical properties of nanocrystalline silicon thin films

Raman and Photoluminescence Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon Concentrations

Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization

Phonon Mode Study of Si Nanocrystals Using Micro-Raman Spectroscopy

Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane