The temperature-dependent luminescence properties of BaAl 2-xSixO4-xNx:Eu2+ and its application in yellowish-green light emitting diode

Mei Zhang,Baohong Li,Jing Wang,Zhiyang Zhang,Qiuhong Zhang,Qiang Su
DOI: https://doi.org/10.1557/jmr.2009.0325
IF: 2.7
2009-01-01
Journal of Materials Research
Abstract:The influences of (SiN)+ and Eu2+ concentration on the optical properties of BaAl2-xSixO4-xN x:Eu2+ were investigated. The lifetime results show that there are two different cation sites occupied by Eu2+ ions and the energy transfer occurs between them. The Huang-Rhys factor and the Stokes energy shift were determined, and thermal quenching with increasing temperature was observed. Finally, intense yellowish-green light emitting diodes (LED) with the color coordinate of (0.2936, 0.4483) under a forwardbias current of 20 mA was successfully fabricated on the basis of a structure consisting of BaAl 2-xSixO4-xNx:Eu2+ phosphor and near-ultraviolet (∼395 nm) GaN chip. © 2009 Materials Research Society.
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