Thermal degradation of BaAl 2 Si 2 O 8 :Eu 2+ phosphor excited by near ultraviolet light

MingXing Ma,DaChuan Zhu,Cong Zhao,Tao Han,ShiXiu Cao,Yu Lei,MingJing Tu
DOI: https://doi.org/10.1007/s11434-012-5025-2
2012-01-01
Chinese Science Bulletin
Abstract:Eu 2+ doped BaAl 2 Si 2 O 8 phosphor was synthesized by one-step calcination of precursors that were prepared by chemical co-precipitation. The thermal degradation properties of BaAl 2 Si 2 O 8 :Eu 2+ were investigated by photoluminescence, lifetime and chromaticity coordinate measurements. BaAl 2 Si 2 O 8 :Eu 2+ is efficiently excited by incident light of 250–400 nm, which matches the emission of near ultraviolet LED chips well. BaAl 2 Si 2 O 8 :Eu 2+ exhibits broad blue emission at 470 nm because of the 4f 6 5d 1 -4f 7 ( 8 S 7/2 ) transition of Eu 2+ ions, and the emission band shows an unusual blue shift with bandwidth broadening and emission intensity decreasing as the annealing temperature is increased. The luminescence decay and CIE chromaticity coordinates of BaAl 2 Si 2 O 8 :Eu 2+ were determined to investigate its application in white LEDs.
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