Abstract:The optimization of microelectronic devices and Microelectromechanical Systems (MEMS) technology depends on the knowledge of the mechanical and thermophysical properties of the thin film materials used to fabricate them. The thickness, stoichiometry, structure and thermal history can affect the properties of thin films causing their mechanical and thermophysical properties to diverge from bulk values. Moreover, it is known that the mechanical and thermophysical properties of thin films vary considerably at different temperatures. Bulk properties of semiconductors have been characterized over a wide range of temperatures; however there is limited information on thin film properties of silicon-based compounds such as silicon nitride, specially at high temperatures. In our work, MEMS devices designed to record the localized maximum temperature during high temperature thermal processes, which we call Breaking T-MEMS, will be presented as a way to determine some of the mechanical properties (Young's modulus and fracture strength) and thermophysical properties (coefficient of thermal expansion) of silicon-rich nitride thin films at high temperatures. The Breaking T-MEMS device consists of a thin film bridge suspended over a substrate. During testing, the devices are thermally loaded in tension by heating the sample. The low coefficient of thermal expansion of the film relative to that of the substrate causes the thin film bridge to break at a specific temperature. Through a combination of indirect experimental measurements, analytical expressions, numerical and statistical analysis, and if the experiments are conducted using at least two different substrates of known temperaturedependent coefficients of thermal expansion, some of the material properties of the film can be calculated from the breaking temperatures of various devices. The two candidate materials for the substrate are silicon and aluminum oxide (sapphire).

Measurement of Thermal Performance of Silicon Nitride Thin Films

Measurement of the Thermal Transport Properties of Dielectric Thin Films Using the Micro-Raman Method

Thermal Conductivity Measurements of Ultra-Thin Single Crystal Silicon Films Using Improved Structure

Transient Thermoreflectance Measurement Of Thermal Conductivity Of Nanoscale Silicon Nitride Thin Films

New Test Structure for Measuring Thermal Conductivity of Polysilicon Thin Films

Micro‐scale, In‐plane Thermal Conductivity of PEDOT:PSS Thin Films Measured by a Suspended Membrane Device

Thermal conductivity measurement of submicrometer-scale silicon dioxide films by an extended micro-Raman method

Research On Thermal Conductivity Measurement Of Submicrometer-Scale Silicon Dioxide Film In Thermal Flow Sensor By Micro-Raman Technique

Mechanical and Thermophysical Properties of Silicon Nitride Thin Films at High Temperatures Using In-Situ Mems Temperature Sensors

Measurement and Analysis of Thermal Properties of Sinx Thin Films

Thermal-Conductivity and Diffusivity of Freestanding Silicon-Nitride Thin-Films

Thermal characterization of thin films: A chip-based approach for in-plane property analysis

In-Situ Testing Of The Thermal Diffusivity Of Polysilicon Thin Films

An Online Test Microstructure for Thermal Conductivity of Surface-Micromachined Polysilicon Thin Films

Thermal Conductivity Characterization of Ultra-Thin Silicon Film Using the Ultra-Fast Transient Hot Strip Method*

Thermal Studies of Nanoporous Si Films with Pitches on the Order of 100 Nm -Comparison Between Different Pore-Drilling Techniques.

A Metrology Of Silicon Film Thermal Conductivity Using Micro-Raman Spectroscopy

Effect of the Post-Heating Temperatures on the Microstructure, Mechanical and Electrical Properties of Silicon Nitride Thin Films

Pulsed Photothermal Reflectance Measurement of the Thermal Conductivity of Sputtered Aluminum Nitride Thin Films

Improvement of the 3$ω$ thermal conductivity measurement technique at nanoscale

Single Silicon Nanowires As Inherent Heaters and Thermometers for Thermal Conductivity Measurements