Abstract:Bi 2 O 2 Se is a new type of semiconductor material, which has the advantages of high carrier mobility, air stability, strong spin-orbit coupling and so on. Its synthesis methods are various, and the application range is very wide. In the past few years, there have been many explorations in the synthesis, large-size growth, and applications of Bi 2 O 2 Se. It has been applied in field effect transistors, infrared photodetectors, semiconductor devices, heterojunctions and spin electronics, etc. Since nanowires have a larger surface area to volume ratio than nano-films, nanowires may have greater advantages in gate regulation and strong spin-orbit coupling, and these properties could play a crucial role in certain fields. However, most of the studies are focused on its two-dimensional films, and there is relatively little research on its one-dimensional counterpart. In this work, a method of growing Bi 2O2Se one-dimensional nanowires by chemical vapor deposition in a three-temperature-zone tubular furnace is introduced. High-quality suspended grown Bi 2 O 2 Se nanowires are obtained. In addition, the effect on the Bi 2O2Se nanowire growth of the position of the mica substrates, i.e., different horizontal positions and vertical heights in the quartz boat, are studied, and the optimum conditions for the growth are summarized. The nanowires are characterized by atomic force microscope and energy dispersive spectrometer to show the information of the size and component. Then, superconducting quantum interference devices based on the Bi 2 O 2 Se nanowires are constructed, and the superconducting quantum interference in a magnetic field is observed, which provides a way to broaden the application of Bi 2O2Se nanowires.

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