Abstract:With the advantages of higher blocking voltage, higher operation temperature, fast-switching characteristics, and lower switching losses, the silicon carbide (SiC) MOSFET has attracted more attentions and become an available replacement of traditional silicon (Si) power semiconductor in applications. Despite of all the merits above, electromagnetic interference (EMI) issues will be induced consequently by the ultra-fast switching transitions of the SiC MOSFET. To quickly and precisely assess the switching behaviors of the SiC MOSFET for EMI investigation, an analytical model is proposed. This model has comprehensively considered most of the key factors, including parasitic inductances, non-linearity of the junction capacitors, negative feedback effect of L, and C-gd shared by the power and the gate stage loops, non-linearity of the trans-conductance, and skin effect during voltage and current ringing stages, which will considerably affect the switching performance of the SiC MOSFET. Additionally, a finite-state machine (FSM) is especially utilized so as to analytically and intuitively describe the switching behaviors of the SiC MOSFET via State-flow. Based on double pulse test (DPT), the effectiveness and correctness of the proposed model are validated through the comparison between the calculated and the measured waveforms during switching transitions. Besides, the model can appropriately depict the spectrum of the drain-source voltage of the MOSFET and is suitable for EMI investigation in applying of SiC devices.

Modeling and analysis of Cdv/dt induced effects in power MOSFETs driving circuits

Modeling Effects of Velocity Overshoot in Extremely Scaled MOSFETs

Modelling and Failure Analysis of SiC MOSFET under the Effects of Parasitic Parameters

Drive parameters analysis considering the crosstalk effect of silicon carbide MOSFET in a Phase-leg configuration

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

A Coupled 3D Finite Element-Circuit Model for the Numerical Analysis of Small Time Scale Transients of an Insulated Gate Bipolar Transistor Power Electronics Device

An Accurate and Effective Spice Model of 6.5kv SiC MOSFET with Parasitic Parameters Analysis in Medium-Voltage Power Module

Refined Electrical Modelling of Power MOSFETs Based on Physical Information

The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

Calculation and Analysis of the Dynamic Turn-on Process of SiC MOSFET Based on a Piecewise Linearization Method

Impact of Gate-Loop Parameters on the Switching Behavior of SiC MOSFETs

A Semiphysical Semibehavioral Analytical Model for Switching Transient Process of SiC MOSFET Module

A Proper Deep Submicron Mosfet Model (Pdsmm) And Its Applications For Delay Modeling Of Cmos Inverters

Analytical Modeling of the Silicon Carbide (sic) MOSFET During Switching Transition for EMI Investigation

SiC MOSFET Crosstalk Modelling with Suppression Considering Impacts of dv/dt and di/dt

Influence of driving and parasitic parameters on the switching behaviors of the SiC MOSFET

Analytical Model to Study Hard Turn-off Switching Dynamics of SiC mosfet and Schottky Diode Pair

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes

Analytical Transient Model of Commutation Units with SiC MOSFET and SiC SBD Pair