Abstract:Radiation hardness is important for electronics operating in harsh radiation environments such as outer space and nuclear energy industries. In this work, radiation-hardened solution-processed ZrLaO thin films are demonstrated. The radiation effects on solution-processed ZrLaO thin films and InOx/ZrLaO thin-film transistors (TFTs) were systemically investigated. The Zr0.9La0.1Oy thin films demonstrated excellent radiation hardness with negligible roughness, composition, electrical property, and bias-stress stability degradation after radiation exposure. The metal-oxide-semiconductor capacitors (MOSCAPs) based on Zr0.9La0.1Oy gate dielectrics exhibited an ultralow flat band-voltage (VFB) sensitivity of 0.11 mV/krad and 0.19 mV/krad under low dose and high dose gamma irradiation conditions, respectively. The low dose condition had a 103 krad (SiO2) total dose and a 0.12 rad/s low dose rate, whereas the high dose condition had a 580 krad total dose and a 278 rad/s high dose rate. Furthermore, InOx/Zr0.9La0.1Oy thin-film transistors (TFTs) exhibited a large Ion/Ioff of 2 × 106, a small subthreshold swing (SS) of 0.11 V/dec, a small interface trap density (Dit) of 1 × 1012 cm-2, and a 0.16 V threshold shift (ΔVTH) under 3600 s positive bias-stress (PBS). InOx/Zr0.9La0.1Oy TFT-based resistor-loaded inverters demonstrated complete swing behavior, a static output gain of 13.3 under 4 V VDD, and an ∼9% radiation-induced degradation. Through separate investigation of the radiation-induced degradation on the semiconductor layer and dielectric layer of TFTs, it was found that radiation exposure mainly generated oxygen vacancies (Vo) and increased electron concentration among gate oxide. Nevertheless, the radiation-induced TFT instability was mainly related to the semiconductor layer degradation, which could be possibly suppressed by back-channel passivation. The demonstrated results indicate that solution-processed ZrLaO is a high-potential candidate for large-area electronics and circuits applied in harsh radiation environments. In addition, the detailed investigation of radiation-induced degradation on solution-processed high-k dielectrics in this work provided clear inspiration for developing novel flexible rad-hard dielectrics.

High-k dielectrics' radiation response to X-ray and γ-ray exposure

High-k materials and their response to gamma ray radiation

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

A Comparative Study of the Γ‐ray Radiation Effect on Zr‐Doped and Al‐Doped HfO2‐Based Ferroelectric Memory

Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements

Impact of Radiation Effect on Ferroelectric Al-Doped HfO2 Metal-Ferroelectric- Insulator-Semiconductor Structure

Effects of Nitrogen Element on Total-Dose Irradiation Response of High-K Hf-based Dielectric Films

Effects of Biased Irradiation on Charge Trapping in HfO 2 Dielectric Thin Films

Influence of Preparing Process on Total-Dose Radiation Response of High-K Hf-Based Gate Dielectrics

Influence of Nitrogen Element on Total-Dose Radiation Response of High-K Hf-based Dielectric Films

Total-Dose Radiation Response of HfLaO Films Prepared by Plasma Enhanced Atomic Layer Deposition

Dielectric properties of electron irradiated PbZrO3 thin films

High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications

Effects of Gamma Irradiation on Functional Response of Relaxor-Ferroelectric Thin Films

High-energy X-Ray Radiation Effects on the Exfoliated Quasi-Two-dimensional Β-Ga2o3 Nanoflake Field-Effect Transistors

Impact of the Radiation Effect on the Energy Storage Density and Wake-Up Behaviors of Antiferroelectric-Like Al-doped HfO2 Thin Films.

Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions

Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics

Radiation Induced Electrical Degradation in Crystalline Al2O3: a Bulk Effect

Ab Initio Molecular Dynamics Simulation of Low Energy Radiation Responses of Α-Al2o3