Interface Roughness of Multilayer Dielectric Optical Thin Film

潘永强,吴振森,杭凌侠,穆亚勇
DOI: https://doi.org/10.3969/j.issn.1007-2276.2009.03.013
2009-01-01
Infrared and Laser Engineering
Abstract:Interface roughness between the substrate and high-reflecting dielectric film, which consisted of 15 alternative layers of TiO2 and SiO2 and was deposited with electron beam evaporation, was measured with Taylor Honson coherence correlation interferometer (Talysurf CCI). The interface roughness of films deposited with different processes and the surface roughness of films deposited on the substrates with different roughness were compared, respectively. Experimental results show that TiO2 thin film has smoothing effect to the roughness of substrate or below interface. With alternative deposition of TiO2 and SiO2 thin film, the interface roughness are in low-high alternation, the range of the low-high alternation of interface roughness diminishes as the layer number of thin film increases. However, while the multilayer film deposited with IBAD, this range hardly decreases. The theory calculation of total scattering losses show that total scattering loss of the uncorrelation model of interface roughness at central wavelength is lower than that of its full correlation model. Experimental results show that the correlation degree of interface roughness is about 0.4.
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