Abstract:Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we utilize the distinctive, high quality (Q~5500) modes of the cavities, and the change in the highest intensity mode as a function of pump power to better understand the dominant radiative processes. The variations of threshold power and lasing wavelength as a function of gain medium help us identify the possible limitations to lower-threshold lasing with quantum dot active medium. In addition, we have identified a distinctive lasing signature for quantum dot materials, which consistently lase at wavelengths shorter than the peak of the room temperature gain emission. These findings not only provide better understanding of lasing in nitride-based quantum dot cavity systems, but also shed insight into the more fundamental issues of light matter coupling in such systems.

Mode Pattern Analysis of Gallium Nitride-Based Laser Diodes

Optimization of Gallium Nitride-Based Laser Diode Through Transverse Modes Analysis

Two-Dimension Simulation of Gallium Nitride-Based Laser Diode

Optical-mode study of galium nitrate based laser diodes

Effects Of Transverse Mode Coupling And Optical Confinement Factor On Gallium-Nitride Based Laser Diode

Characteristics and Structural Optimization of Multi-Quantum-Well Structure of GaN-Based Laser Diode

Performance Enhancement of the GaN-based Laser Diode by Using an Unintentionally Doped GaN Upper Waveguide

Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers

Analytical Models of Electron Leakage Currents in Gallium Nitride-Based Laser Diodes and Light-Emitting Diodes

Design Considerations for GaN-Based Blue Laser Diodes with InGaN Upper Waveguide Layer

Design and Growth of GaN-based Blue and Green Laser Diodes

Numerical Study of Transient Oscillation in Gain-Switched InGaN-Based Laser Diodes

Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities

Differential Resistance of GaN-based Laser Diodes with and Without Polarization Effect

Atomic-level Quantum Well Degradation of GaN-based Laser Diodes Investigated by Atom Probe Tomography

Measurement of Optical Gain and Optical Internal Loss in GaN-based Laser

Study of Equivalent Circuit of GaN Based Laser Chip and Packaged Laser

Enhancing Performance of GaN-based LDs by Using GaN/InGaN Asymmetric Lower Waveguide Layers

Effects of TMIn Flow Rate During Quantum Barrier Growth on Multi-quantum Well Material Properties and Device Performance in GaN-Based Laser Diodes

Modal Gain Investigation on the GaAs-based InAs/InGaAs Quantum Dot Mode-locked Laser

Enhanced carrier confinement and radiative recombination in GaN-based lasers by tailoring first-barrier doping.