Abstract:Abstract The time‐consuming and laborious heat treatment is indispensable for preparing seed layer in solvothermal synthesis of WO 3 film. Herein, WO 3 film is prepared composed of single crystal WO 3 nanowires on indium tin oxide (ITO) glass assisted with simple and energy‐saving electrodeposited seed layer for the first time. The catalyst Pt is sputtered on it for 30 s after WO 3 film is synthesized to form the hydrogen gasochromic film. The film structure is redesigned to improve its hydrogen gasochromic properties further. Before WO 3 film is solvothermally synthesized, Pt is sputtered on seed layer for 15 s, then it is sputtered for 15 s again after WO 3 film is prepared. The Pt sputtered on seed layer greatly changes the morphology of nanowires, making them sparse, slender, and cross‐linked like a bird's nest. Moderate 37% HCl is added during the solvothermal process to promote the growth of WO 3 nanowires. The variation of transmittance (wavelength: 1000 nm), coloring rate (4% H 2 /Ar) and bleaching rate (air) of WO 3 hydrogen gasochromic film with new structure at room temperature are 69.1%, 3.1%/s (increases 19.6%) and 0.85%/s (increases 193%), respectively. This study offers a new strategy for seed layer technology of WO 3 film and structural design of WO 3 hydrogen gasochromic film.

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