Abstract:Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. However, interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance. In this chapter, we present a technique to deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Organic spin valves using this method exhibit a sharper interface and a giant MR of up to similar to 300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR. Furthermore, we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer. We show that the resistance can be controlled by not only the spin alignment of the two ferromagnetic electrodes, but also by the electric polarization of the interfacial ferroelectric layer: the MR of the spin valve depends strongly on the history of the bias voltage which is correlated with the polarization of the ferroelectric layer; the MR even changes sign when the electric polarization of the ferroelectric layer is reversed. This new tunability can be understood in terms of the change of relative energy level alignment between ferromagnetic electrode and the organic spacer caused by the electric dipole moment of the ferroelectric layer. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multistate organic spin valves and shed light on the mechanism of the spin transport in organic spin valves.

Spin-Dependent Current Modulation In Organic Spintronics

Organic Spin-Valves: Physics and Applications

A New Twist on Organic Spintronics; Controlling Transport in Organic Sandwich Devices Using Fringe Fields from Ferromagnetic Films

Recent advances in organic spin-valve devices

Switching of Current Spin Polarization by Electron-Phonon Interaction in a Quantum Dot Device

Dynamical Behavior of Pure Spin Current in Organic Materials

Spin-Polarized Thermionic Emission at the Interface of Ferromagnetic Metal and Organic Semiconductor

SPIN CURRENT AND SPIN HALL EFFECT IN SYSTEMS WITH SPIN-ORBIT COUPLING

Giant magnetoresistance in organic spin-valves

Spin photocurrent and current-induced spin polarization ——New progress in semiconductor spintronics

Direct coupling between charge current and spin polarization by extrinsic mechanisms in graphene

Effect of lattice distortion on spin admixture and quantum transport in organic devices with spin-orbit coupling

Tunable spin photogalvanic effect in two-dimensional van der Waals ferroelectric semiconductors with spin-orbit coupling

Strategies and applications of generating spin polarization in organic semiconductors.

Spin-sensitive charge oscillation in a single-molecule transistor

Spin Transport in a Spin-Injected Organic Semiconductor System

Simulations of Polaron Spin Inversion in an Organic Semiconductor: Comparison of Two Mechanisms

Magnetoresistance in organic spintronic devices: the role of nonlinear effects

Interface Engineering For Spin Injection, Detection And Manipulation In Alq(3)-Based Organic Spin Valves

A spin-boson theory for magnetotransport in organic semiconducting materials

The Application of Organic Semiconductor Materials in Spintronics