Abstract:Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. However, interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance. In this chapter, we present a technique to deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Organic spin valves using this method exhibit a sharper interface and a giant MR of up to similar to 300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR. Furthermore, we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer. We show that the resistance can be controlled by not only the spin alignment of the two ferromagnetic electrodes, but also by the electric polarization of the interfacial ferroelectric layer: the MR of the spin valve depends strongly on the history of the bias voltage which is correlated with the polarization of the ferroelectric layer; the MR even changes sign when the electric polarization of the ferroelectric layer is reversed. This new tunability can be understood in terms of the change of relative energy level alignment between ferromagnetic electrode and the organic spacer caused by the electric dipole moment of the ferroelectric layer. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multistate organic spin valves and shed light on the mechanism of the spin transport in organic spin valves.

Spin-Polarized Thermionic Emission at the Interface of Ferromagnetic Metal and Organic Semiconductor

Organic Spin-Valves: Physics and Applications

A New Twist on Organic Spintronics; Controlling Transport in Organic Sandwich Devices Using Fringe Fields from Ferromagnetic Films

Distinguishing Between Tunneling and Injection Regimes of Ferromagnet/Organic Semiconductor/Ferromagnet Junctions

Recent advances in organic spin-valve devices

Revealing the key role of molecular packing on interface spin polarization at two-dimensional limit in spintronic devices

Spin Injection from Ferromagnetic Metal Directly into Non-Magnetic Semiconductor under Different Injection Currents

Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky Contacts

Spin-Polarized Charge Separation at Two-Dimensional Semiconductor/Molecule Interfaces

Interface Engineering For Spin Injection, Detection And Manipulation In Alq(3)-Based Organic Spin Valves

Electron space charge effect on spin injection into semiconductors

Complete spin extraction from semiconductors near ferromagnet-semiconductor interfaces

Electron Interaction Effects on Spin Injection into Semiconductors

Thermally Driven Pure Spin Current Through Mesoscopic Ferromagnetic Semimetal-Normal Metal Junctions

Spin Polarized Tunneling Through Diluted Magnetic Semiconductor Barriers

Ground state properties of ferromagnetic metal/conjugated polymer interfaces

Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor

Spin Injection from Ferromagnetic Co Nanoclusters into Organic Semiconducting Polymers

Ferromagnetic imprinting of spin polarization in a semiconductor

Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier

Magnetoresistance in organic spintronic devices: the role of nonlinear effects