Abstract:In the present study, vacuum evaporation method is used to deposit Bi2Se3 film onto Si nanowires (NWs) to form bulk heterojunction for the first time. Its photodetector is self-powered, its detection wavelength ranges from 390 nm to 1700 nm and its responsivity reaches its highest value of 84.3 mA/W at 390 nm. In comparison to other Bi2Se3/Si photodetectors previously reported, its infrared detection length is the second longest and its response speed is the third fastest. Before the fabrication of the photodetector, we optimized the growth parameter of the Bi2Se3 film and the best Bi2Se3 film with atomic steps could finally be achieved. The electrical property measurement conducted by the physical property measurement system (PPMS) showed that the grown Bi2Se3 film was n-type conductive and had unique topological insulator properties, such as a metallic state, weak anti-localization (WAL) and linear magnetic resistance (LMR). Subsequently, we fabricated Si NWs by the metal-assisted chemical etching (MACE) method. The interspace between Si NWs and the height of Si NWs could be tuned by Ag deposition and chemical etching times, respectively. Finally, Si NWs fabricated with the Ag deposition time of 60 s and the etching time of 10 min was covered by the best Bi2Se3 film to be processed for the photodetector. The primary n-Bi2Se3/p-Si NWs photodetector that we fabricated can work in a self-powered mode and it has a broadband detection range and fast response speed, which indicates that it can serve as a promising silicon-based near- and mid-infrared photodetector.

Photoconductive Properties of Selenium Nanowire Photodetectors.

Fabrication of P-Type Znse:Sb Nanowires for High-Performance Ultraviolet Light Photodetector Application

Photoconductivity of Single-crystalline Selenium Nanotubes

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Facile synthesis of hybrid nanorods with the Sb2Se3/AgSbSe2 heterojunction structure for high performance photodetectors.

Fabrication and Characterization of a Self-Powered n-Bi2Se3/p-Si Nanowire Bulk Heterojunction Broadband Photodetector

Temperature Dependence of Photoelectrical Properties of Single Selenium Nanowires

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Facile Microwave-Assisted Synthesis of Uniform Sb2Se3nanowires for High Performance Photodetectors

High-Performance Near-Infrared Photodetectors Based on P-Type SnX (X = S, Se) Nanowires Grown Via Chemical Vapor Deposition

Single‐Crystalline Sb2Se3 Nanowires for High‐Performance Field Emitters and Photodetectors

Solution-grown nanowire devices for sensitive and fast photo detection

A high performance broadband photodetector based on (SnxSb1−x)2Se3 nanorods with enhanced electrical conductivity

Photoconductive Properties of Er-CdSe Nanobelt Detectors

Hybrid WSe 2 -In 2 O 3 Phototransistor with Ultrahigh Detectivity by Efficient Suppression of Dark Currents.

A High‐Performance Self‐Powered UV‐Visible‐Infrared Broadband Photodetector Based on a Solution‐Processed Bi2Se3/Se Nanorods Heterojunction

Self-Assembled BiGaSeAs Composite Superlattice-Structured Nanowire for Broad-Band Photodetection

Broadband photodetector based on vapor-deposited selenium self-supporting films

Fabrication of High-Quality In2Se3 Nanowire Arrays Toward High-Performance Visible-Light Photodetectors.

Transparent and Flexible Selenium Nanobelt-Based Visible Light Photodetector