Abstract:In this study, synthesized strontium titanate (SrTiO3) nanocubes were coated on n-Si semiconductor by spin coating to obtain a heterojunction device. Transmission electron microscopy image, scanning electron microscope image and x-ray diffraction patterns of thin film of SrTiO3 nanocubes coated on Si surface were taken for structural and morphological characterization of the material. The basic device parameters such as ideality factor (n) and barrier height (Φb) values of the reference Ni/Si/Al metal–semiconductor diode and of the Ni/SrTiO3/n-Si/Al heterojunction devices were calculated with the thermionic emission (TE) theory. The n and Φb values of the reference Ni/n-Si/Al device were calculated as 1.93 and 0.60 eV, respectively at room temperature. On the other hand, lower n and higher Φb values of Ni/SrTiO3/n-Si/Al heterojunction device were calculated as 1.34 and 0.63 eV, respectively. With these results, the current–voltage (I–V) measurements of the heterojunction device in the 80–400 K range were taken and the n, Φb, series resistance (Rs) values were calculated depending on the temperature by using different methods such as TE, Cheung and Norde functions. It was observed that while the temperature values decreased, n and Rs values of the device increase and Φb value decreases. The results obtained showed that the charge transport system is compatible with TE. The device parameters calculated from the Cheung and Norde methods also showed similar changes depending on the temperature. However, since the calculation method is different according to the TE method, different values were obtained in the device parameters. In addition, the curve Φb and (1/n)−1 against (1/2kT) was observed in accordance with the double Gauss distribution of the barrier heights. It was seen that the reverse bias I–V characteristics of the Ni/SrTiO3/n-Si/Al can be used in thermal sensors applications.

Temperature-Dependent Transport Properties in Oxide P – N Junction above Room Temperature

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

Strain-assisted Tunneling Current Through TbMnO3∕Nb-1 Wt %-Doped SrTiO3 P–n Junctions

Tunable Electrical Properties of NiO Thin Films and P-Type Thin-Film Transistors

Preparation of InN films at different substrate temperatures and the effect of operating temperatures on the carrier transmission characteristics of p-NiO/n-InN heterojunction

Thickness-Dependent Rectifying Behavior in Heterojunctions of Tbmno3/Nb-1.0 Wt.%-Doped Srtio3

Rectifying Behaviours of Heterojunctions Composed of Manganites with Different Resistive Properties

High-temperature photoelectronic transport behavior of n-TiO 2 nanorod clusters/p-degenerated boron-doped diamond heterojunction

Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

Electrical transport properties of heteroepitaxial p–n junction of charge-ordered La7/16Ca9/16MnO3 and 0.5 wt% Nb doped SrTiO3

Study on the effect of sputtering pressure on the physical properties of InN films on ITO substrate and the dependence of carrier transport characteristics of Li-doped p-NiO/n-InN heterojunction on the environmental temperature

Broadening the Temperature Range for High Thermoelectric Performance of Bulk Polycrystalline Strontium Titanate by Controlling the Electronic Transport Properties

Transport Properties and Backward Diode-Like Behaviour in Manganite-Based P–i–n Junctions

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Interface-dependent rectifying TbMnO 3-based heterojunctions

Rectifying I-V Characteristic of LiNbO3∕Nb-doped SrTiO3 Heterojunction

Rectifying Properties of the La2CuO4/Nb-0.7 Wt%-Doped SrTiO3 Heterojunction

Study on the Preparation of InN Films under Different Substrates and Nitrogen-Argon Flow Ratios and the Effect of Operating Temperature on Carrier Transport in P-Nio/n-inn Heterojunctions

Temperature Coefficients Of Grain Boundary Resistance Variations In A Zno/P-Si Heterojunction

Temperature dependent electronic transport properties of heterojunctions formed between perovskite SrTiO3 nanocubes and silicon

The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n -ZnO/ p -Si heterojunction