Self-extrusion of Te Nanowire from Si–Sb–Te Thin Films

Y. Cheng,X. D. Han,X. Q. Liu,K. Zheng,Z. Zhang,T. Zhang,Z. T. Song,B. Liu,S. L. Feng
DOI: https://doi.org/10.1063/1.3013513
IF: 4
2008-01-01
Applied Physics Letters
Abstract:A crystallized Si2Sb2Te5 thin film was observed to extrude single-crystalline [0001] oriented tellurium nanowires at room temperature. The single crystalline Te nanowires nucleation and extruded outgrowth can be greatly accelerated by electron-beam-illumination (EBI) in a transmission electron microscope by an order as high as four. The EBI-enhanced outgrowth speed of Te nanowires is a function of electron beam flux and can be described as v=k ln(J+m). This Te nanowires self-outflow phenomenon comes from a decomposition process of the Si2Sb2Te5 matrix and provides an interesting model and mechanism of the nanowires' growth, which is distinctive to the vapor-liquid-solid (VLS) mechanism.
What problem does this paper attempt to address?