Electronic Transport in Outer-Wall Disordered Carbon Nanotube Molecular Devices

N. Xu,J. W. Ding,D. Y. Xing

DOI: https://doi.org/10.1063/1.2903447

IF: 2.877

2008-01-01

Journal of Applied Physics

Abstract:Two device models of outer-wall disordered carbon nanotube with lead contacts of multi- and single-wall nanotubes are proposed for both measurement and control of carrier mobility in multiwall carbon nanotubes. By developing a decomposition elimination method for Green’s function, we have explored the outer-wall disorder effects on the electronic transport in such surface-doped-like molecular devices. It is found that the average conductance and localization length largely exceed those in the bulk disorder, showing the relative robustness of the model device to surface disorder. Especially, the fashion of the conductance variations with disorder depends strongly on the Fermi energy and the makeup of lead contacts. In the absence of the contact scattering, a nonmonotonic behavior, first decreasing then increasing, is observed in the conductance variations with disorder. In the presence of the contact scattering, an abnormal growth of the conductance is obtained at much lower disorder, due to the destroyed coherence by the introduction of disorder. The results present a new approach for the design and application of the nanotube molecular devices and device wiring.