Hopping Conduction in Disordered Carbon Nanotubes

D. P. Wang,D. E. Feldman,B. R. Perkins,A. J. Yin,G. H. Wang,J. M. Xu,A. Zaslavsky

DOI: https://doi.org/10.1016/j.ssc.2007.02.028

2006-10-27

Abstract:We report electrical transport measurements on individual disordered carbon nanotubes, grown catalytically in a nanoporous anodic aluminum oxide template. In both as-grown and annealed types of nanotubes, the low-field conductance shows as exp[-(T_{0}/T)^{1/2}] dependence on temperature T, suggesting that hopping conduction is the dominant transport mechanism, albeit with different disorder-related coefficients T_{0}. The field dependence of low-temperature conductance behaves an exp[-(xi_{0}/xi)^{1/2}] with high electric field xi at sufficiently low T. Finally, both annealed and unannealed nanotubes exhibit weak positive magnetoresistance at low T = 1.7 K. Comparison with theory indicates that our data are best explained by Coulomb-gap variable range hopping conduction and permits the extraction of disorder-dependent localization length and dielectric constant.

Mesoscale and Nanoscale Physics