Abstract:We calculate the resistance and mean free path in long metallic and semiconducting silicon nanowires (SiNWs) using two different numerical approaches: A real space Kubo method and a recursive Green's function method. We compare the two approaches and find that they are complementary: depending on the situation a preferable method can be identified. Several numerical results are presented to illustrate the relative merits of the two methods. Our calculations of relaxed atomic structures and their conductance properties are based on density functional theory without introducing adjustable parameters. Two specific models of disorder are considered: Un-passivated, surface reconstructed SiNWs are perturbed by random on-site (Anderson) disorder whereas defects in hydrogen passivated wires are introduced by randomly removed H atoms. The un-passivated wires are very sensitive to disorder in the surface whereas bulk disorder has almost no influence. For the passivated wires, the scattering by the hydrogen vacancies is strongly energy dependent and for relatively long SiNWs (L>200 nm) the resistance changes from the Ohmic to the localization regime within a 0.1 eV shift of the Fermi energy. This high sensitivity might be used for sensor applications.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: to study the electron transport properties in silicon nanowires (SiNWs), especially the influence of surface and bulk disorder on the transport properties. Specifically, the authors focus on two types of disorder models:
1. **Unpassivated surface - reconstructed silicon nanowires**: The surface atoms of these nanowires are perturbed by random in - situ (Anderson) disorder.
2. **Hydrogen - passivated silicon nanowires**: Defects are introduced into these nanowires by randomly removing hydrogen atoms.
Through two different numerical methods - the real - space Kubo method and the recursive Green's function method, the authors calculated the resistance and the mean free path and compared the advantages and disadvantages of these two methods. In addition, they also explored the influence of these disorder models on the conductivity of nanowires, especially the changes at different energies.
### Summary of main problems:
- **Surface sensitivity of unpassivated nanowires**: Research shows that unpassivated silicon nanowires are very sensitive to surface disorder, while bulk disorder hardly affects the transport properties.
- **Energy - level - dependent scattering of passivated nanowires**: For hydrogen - passivated silicon nanowires, the scattering caused by hydrogen vacancies strongly depends on energy. In longer nanowires ($L> 200$ nm), with a small shift (0.1 eV) of the Fermi level, the resistance can change from the ohmic region to the localized region.
- **Potential for sensor applications**: This high sensitivity can be used for sensor applications, such as detecting chemical or biological molecules.
### Key formulas:
1. **Diffusion coefficient $D(E,t)$**:
\[
D(E,t)=\frac{1}{t}\frac{\text{Tr}\{(X(t)-X(0))^{2}\delta(E - H)\}}{\text{Tr}\{\delta(E - H)\}}
\]
2. **Elastic mean free path $l_{e}(E)$**:
\[
l_{e}(E)=\frac{\max\{D(E,t),t > 0\}}{v(E)}
\]
3. **Conductivity $g(E,L_{i})$**:
\[
g(E,L_{i})=\frac{2e^{2}}{h}\text{Tr}\left[G_{i}^{\dagger}(E)\Gamma_{R}(E)G_{i}(E)\Gamma_{L}(E)\right]
\]
These research results are helpful for in - depth understanding of the electron transport behavior of silicon nanowires under different conditions and provide a theoretical basis for future nano - electronic and nano - photonic applications.