Room Temperature Ferromagnetism in Sn1−xVxO2 Films Prepared by Sol-Gel Method

Li Zhang,Shihui Ge,Yalu Zuo,Xueyun Zhou,Yuhua Xiao,Shiming Yan,Xiufeng Han,Zhenchao Wen
DOI: https://doi.org/10.1063/1.3041627
IF: 2.877
2008-01-01
Journal of Applied Physics
Abstract:The structure and magnetic properties of Sn1−xVxO2 (x=0.02–0.22) thin films fabricated on Si (111) substrate using a sol-gel method and spin coating technique have been investigated. All the samples have pure rutile polycrystalline structure and exhibit room temperature ferromagnetism. The magnetic moment per V reaches 2.92μB for the Sn0.98V0.02O2 film and drops rapidly as V content is increased. X-ray photoelectron spectroscopy study reveals that vanadium is in V4+ chemical state. Various annealing treatments were performed to explore the origin of the ferromagnetism. It is found that the ferromagnetism of Sn0.98V0.02O2 film disappears after annealing in a rich-oxygen atmosphere and occurs again after annealing in a low vacuum condition. Furthermore, an annealing in Sn vapor leads to the decrease in ferromagnetism. These results confirm that the oxygen vacancies play a critical role in introducing ferromagnetism of Sn1−xVxO2 films; therefore, the origin of the ferromagnetism in our samples can be understood in the framework of the bound magnetic polaron model.
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