Temperature Dependence Of Photoluminescence Properties Of Cds(X)Se(1-X) Quantum Dots Prepared On Silicon Substrate

X. Chen,H. Q. Zhang,L. Z. Hu,D. Q. Yu,Z. W. Zhao,S. S. Qiao,J. Li,J. X. Zhu
DOI: https://doi.org/10.1109/ICSICT.2008.4734715
2008-01-01
Abstract:CdS(x)Se(1-x) quantum dots (QDs) were prepared on silicon substrate by a simple physical method. The temperature dependent photoluminescence (PL) properties of the CdS(x)Se(1-x) QDs have been investigated in a temperature range of 10-300 K. The PL intensity reveals an unusual increasing behaviour with increasing temperature in the range of 180 - 260 K. And the energy gap shows a redshift of 62.23 meV when the temperature increases from 10 K to 300 K. The sulfur component (x) of CdS(x)Se(1-x) QDs is about 86.45% by calculation approximatively from PL peak energy at room temperature following Vigo's Law. We also obtain the parameters of the varshni relation for CdS(x)Se(1-x) QDs from PL peak energy as a function of temperature and the best-fit curve.
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