Deposition of indium tin oxide films on PET flexible substrate at room temperature

Zhinong Yu,Longfeng Feng Xiang,Jin Xu,Wei Xue,Huaqing Wang
2008-01-01
Abstract:Flexible ITO films were deposited by Ion Beam Assisted Deposition (IBAD) to decrease the substrate temperature. Especially, the effects of influences of SiO 2 buffer layer on the properties of ITO films were studied. The results showed that the addition of SiO 2 reduced the increase of X-ray peak intensity and the blue shift of X-ray peak point. The resistivity of ITO film is 1.21 × 10 -3 Ω·cm and the transmittance about 85%. The film surface is comparatively smooth.
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