Abstract:A facile yet effective method is reported to prepare large‐area (centimeter‐scale), non‐close‐packed, orientation‐tunable AuNR@PS superlattice arrays through the combination of rapid liquid–liquid interfacial assembly and electric field‐assisted orientation strategy. The AuNR@PS arrays are employed as the nano‐floating gate of the field‐effect transistor memory device, tunable charge trapping, and retention characteristics in the device can be realized. In this work, it is reported that large‐area (centimeter‐scale) arrays of non‐close‐packed polystyrene‐tethered gold nanorod (AuNR@PS) can be prepared through a liquid–liquid interfacial assembly method. Most importantly, the orientation of AuNRs in the arrays can be controlled by changing the intensity and direction of electric field applied in the solvent annealing process. The interparticle distance of AuNR can be tuned by varying the length of polymer ligands. Moreover, the AuNR@PS with short PS ligand are favorited to form orientated arrays with the assistance of electric field, while long PS ligands make the orientation of AuNRs difficult. The orientated AuNR@PS arrays are employed as the nano‐floating gate of field‐effect transistor memory device. Tunable charge trapping and retention characteristics in the device can be realized by electrical pulse with visible light illumination. The memory device with orientated AuNR@PS array required less illumination time (1 s) at the same onset voltage in programming operation, compared to the control device with disordered AuNR@PS array (illumination time: 3 s). Moreover, the orientated AuNR@PS array‐based memory device can maintain the stored data for more than 9000 s, and exhibits stable endurance characteristic without significant degradation in 50 programming/reading/erasing/reading cycles.

Fabrication of PtAu Nanoparticles Monolayer Applicable to Nonvolatile Floating Gate Memory

Monolayer FePt Nanocrystal Self-Assembly Embedded into Atomic-Layer-deposited Al2O3 Films for Nonvolatile Memory Applications

In Situ Self‐Assembly of Nanoscale Particles into Macroscale Ordered Monolayers with Enhanced Memory Performance

A Hybrid Method for Fabrication of Au Nanocrystals Nonvolatile Memory

Atomic Layer Deposition of High-Density Pt Nanodots on Al2O3 Film Using (mecp)pt(me)3 and O2 Precursors for Nonvolatile Memory Applications.

Langmuir−Blodgett Film Deposition of Metallic Nanoparticles and Their Application to Electronic Memory Structures

Large‐Area Arrays of Polymer‐Tethered Gold Nanorods with Controllable Orientation and Their Application in Nano‐Floating‐Gate Memory Devices

Nonvolatile Memory Capacitors Based on Al2O3 Tunneling and HfO2 Blocking Layers with Charge Storage in Atomic-Layer-deposited Pt Nanocrystals

Low-cost Fabrication and Polar-Dependent Switching Uniformity of Memory Devices Using Alumina Interfacial Layer and Ag Nanoparticle Monolayer

Nanoparticle Floating-Gate Transistor Memory Based on Solution-Processed Ambipolar Organic Semiconductor

Conjugated Polymer Nanoparticles as Nano Floating Gate Electrets for High Performance Nonvolatile Organic Transistor Memory Devices

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Formation of Stacked Ruthenium Nanocrystals Embedded in SiO2for Nonvolatile Memory Applications

Orthogonal printing of uniform nanocomposite monolayer and oriented organic semiconductor crystals for high-performance nano-crystal floating gate memory

Metal Nanogap Memory: Performances and Switching Mechanism

Physical mechanisms involved in the formation and operation of memory devices based on a monolayer of gold nanoparticles-polythiophene hybrid materials

Performance and Retention Characteristics of Nanocrystalline Si Floating Gate Memory with an Al2O3 Tunnel Layer Fabricated by Plasma-Enhanced Atomic Layer Deposition

Preparation of NiFe Binary Alloy Nanocrystals for Nonvolatile Memory Applications

Multilayer Graphene Nanoribbon and Carbon Nanotube Based Floating Gate Transistor for Nonvolatile Flash Memory

A flexible floating-gate based organic field-effect transistor non-volatile memory based on F8BT/PMMA integrated floating-gate/tunneling layer

Capacitance Characteristics of Metal-Oxide-semiconductor Capacitors with a Single Layer of Embedded Nickel Nanoparticles for the Application of Nonvolatile Memory