Abstract:Four types of self-assembled InAs/GaAs quantum dots (QDs) were grown by molecular beam epitaxy and studied via temperature-dependent and time-resolved photoluminescence (PL) spectroscopy measurements. A thin InGaAs stain reducing layer (SRL) is adopted which extends the emission wavelength to 1.3 μm and the influence of strain on QDs is investigated. The SRL releases the strain between the wetting layer and QDs, and enlarges the size of QDs, as shown by atomic force microscopy measurements. As the thickness of InAs layer decreases to 1.7 ML, the QDs with the SRL are chained to strings and the density of QDs increases significantly, which leads to an abnormal redshift of 1.3 μm PL peak at room temperature. PL peaks of InAs QDs with the SRL show redshift compared with the QDs directly deposited on GaAs matrix. The dependences of PL lifetime on the QD size, density and temperature (T) are systematically studied. It is observed that the PL lifetime of QDs is insensitive to T below 50 K. Beyond 50 K, increases and then drops at higher temperature, with a peak at TC, which was determined by the SRL and the thickness of InAs. We have also observed an obvious PL spectral redshift of the QDs with 1.7 ML InAs coverage on SRL at low T as the measuring time delays. The PL lifetime of QDs with the SRL is smaller than that of QDs without the SRL. The QDs with different densities have different PL lifetime dependence on the QDs size. These observations can be explained by the competition between the carrier redistribution and thermal emission.

Strain Engineered Quantum Dots for Long Wavelength Emission

Investigation of InGaAs Strain Reducing Layer on the Redshift of PL Wavelength for InAs Quantum Dots

Influence of Strain-Reducing Layer on Strain Distribution of Self-Organized InAs/GaAs Quantum Dot and Redshift of Photoluminescence Wavelength

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots

Effects of Inalas Strain Reducing Layer on the Photoluminescence Properties of Inas Quantum Dots Embedded in Ingaas/Gaas Quantum Wells

Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure

Strain accumulation in InAs/In x Ga 1− x As quantum dots

Effect of GaAs/GaSb Combination Strain-Reducing Layer on Self-Assembled InAs Quantum Dots

Temperature Dependent and Time-Resolved Photoluminescence Studies of Inas Self-Assembled Quantum Dots with Ingaas Strain Reducing Layer Structure

Strain accumulation in InAs/InxGa1−xAs quantum dots

The Influence of Strain-Reducing Layer on Strain Distribution and Ground State Energy Levels of GaN/A1N Quantum Dot

Impact of GaNAs Strain Compensation Layer on the Electronic Structure of InAs/GaAs Quantum Dots

Effects of the Thickness of Spacing Layer and Capping Layer on the Strain Distribution and Wavelength Emission of Inas/Gaas Quantum Dot

Improving the Luminescence Properties of Multi-stacked InAs/GaAs Quantum Dots by GaAsP Strain-reducing Layer

The Strain Relaxation of InAs/GaAs Self-Organized Quantum Dot

Effects of InxGa1−xAs Matrix Layer on InAs Quantum Dot Formation and Their Emission Wavelength

Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Covered by InxGa1−xAs (0⩽X⩽0.3)

Strain Distribution and Electronic Structure of Self-Organized Inas/Gaas Quantum Dots

Large and uniform optical emission shifts in quantum dots externally strained along their growth axis

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates