Study on the crystal growth and properties of AgGa1-xInxSe2

Yi Huang,Beijun Zhao,Shifu Zhu,Guodong Zhao,Weilin Zhu,Chengfu Xu,ShuQuan Wan,Zhiyu He
2007-01-01
Abstract:An integral AgGa1-xInxSe2(x = 0.2) single crystal with the diameter of 15 mm and length of 35 mm was produced by the modified Bridgman method. Using X-ray diffraction the spectrum of AgGa1-xInxSe2 crystal was obtained. The lattice constants of a and c were 0.60125 nm and 1.10243 nm, respectively. The crystal was chalcopyrite structure. The results were in good agreement with the standard PDF card (No.35-1095). After cleavage along the spontaneous face it was proved that the face was (101) face and the four order X-ray spectrum of the {101} face was obtained. Spontaneous showing along the (101) face was the growth characteristic of AgGa1-xInxSe2 (x = 0.2) crystal. The rocking curve's peak of the (101) face was sharp and the width value of the half-peak was small, which showed that die crystal has integral structure. The melting and freezing points of AgGa1-xInxSe2 (x = 0.2) were 822.67°C and 801.58°C, respectively, which were measured by DSC. The measure results proved that the crystal was of integral structure and high quality.
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