Growth of Large Size AgGaGeS 4 Crystal for Infrared Conversion

Haixin Wu,Youbao Ni,Chen Lin,Mingsheng Mao,Ganchao Cheng,Zhenyou Wang
DOI: https://doi.org/10.1007/s12200-011-0155-8
2011-01-01
Frontiers of Optoelectronics in China
Abstract:Single crystals of AgGaGeS4 (AGGS) were grown in a modified Bridgman furnace with 25 mm in diameter and 70mm in length. The transmission spectra of as-grown AGGS slices were measured on a Hitachi 270–30 spectrophotometer, the fabricated device crystal was 5 mm×5mm×3.5 mm in dimension and its absorption was 0.04–0.15 cm−1. Frequency doubling of 2.79 and 8 μm laser radiation were investigated using fabricated device crystals with thicknesses of 3.5 and 2.7 mm respectively.
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