Abstract:The rapid development of the next-generation high-speed wireless communication system has set increasingly stringent requirements on the spectral purity of local RF oscillators. Low phase noise is crucial to support advanced modulation scheme enabling high data-rates wireless link [1]. A viable popular approach is to coupled N identical oscillators together to improve the phase noise by 10log <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</inf> N at the cost of N times higher power [2]–[6]. Nevertheless, the coupling network needs to be designed carefully to avoid undesired multi-tone concurrent oscillations. Besides, area occupation is another issue of multi-core VCOs. The star-geometry as shown in Fig. 1. (bottom left), which is simple N times duplication of single core, occupies N times larger area so comes with an area penalty [3]–[5]. To solve this problem, circular geometry is proposed where the passives are merged into a single passive structure and the minimal realizable inductance is reduced while keeping a high Q factor [6]–[7]. In order to further reduce the silicon area, a square-geometry quad-core oscillator with inductor sharing technique is proposed in this paper and it exhibits a compact area of 0.09 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which is the smallest quad-core VCO operating at a similar oscillation frequency. The unwanted mode is suppressed by the metal trace that connects the drain node of adjacent cores. Thanks to the proposed square-geometry and inductor sharing technique, the proposed quad-core class-F VCO can further reduce the area occupation. The proposed VCO is fabricated in 65nm CMOS technology. The measured phase noise is -137.2 dB/Hz at 10 MHz offset frequency from a carrier of 19 GHz, which translates to the FoM of 186.1 dBc/Hz.

Novel Composite-Channel Al0.3ga0.7n/Al-0.05 Ga0.95n/Gan Hemt Mmic Vco with Low Phase Noise

A Low Phase-Noise X-band MMIC VCO Using High-Linearity and Low-Noise Composite-Channel Al 0.3 Ga 0.7 N/Al 0.05 Ga 0.95 N/GaN HEMTs

A High Power C-Band Algan/Gan Hemt Mmic Vco

A Superharmonic Injection based G-band Quadrature VCO in CMOS

A Low Phase Noise VCO with Placement Reordered Cores and High-Q Bond Wire Array Inductors

A 40 Nm Cmos V-Band Vco with On-Chip Body Bias Voltage Control Technique

Low phase-noise 5 GHz AlGaN/GaN HEMT oscillator integrated with BaxSr1-xTiO3 thin films

Low phase-noise 5 GHz AlGaN/GaN HEMT oscillator integrated with Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films

MMIC LNA Based Novel Composite-Channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaNHEMTs

A Compact Square-Geometry Quad-Core 19 GHz Class-F VCO with Parallel Inductor-sharing Technique achieving -137.2 dBc/Hz Phase Noise at 10MHz Offset

An Ultra-Low-Voltage High-Performance VCO in 0.13 μm CMOS

A 2ghz Low Power Differentially Tuned CMOS Monolithic LC-VCO

A Low-Phase-Noise Quad-Core Millimeter-Wave Fundamental VCO Using Circular Triple-Coupled Transformer in 65-Nm CMOS

A 52 GHz VCO with low phase noise implemented in SiGe BiCMOS technology

A 5-Ghz Low Phase Noise and Wide Tuning Range Voltage Controlled Oscillator Design

Broadband Microwave Noise Characteristics of High-Linearity Composite-Channel Al/sub 0.3/ga/sub 0.7/n/al/sub 0.05/ga/sub 0.95/n/gan HEMTs

A 194.9dbc/hz FoM and 6.8-to-11.6ghz Quad-Core Dual-Mode Class-F VCO Featuring Wideband Flicker Noise Suppression

A 5-8 GHz Wideband and Low Phase Noise Cross-Coupled LC VCO Using 6-bit DCCA in 40nm CMOS Process

High Power Gan Oscillators Using Field-Plated Hemt Structure

A wide tuning 10 Ghz VCO and a high frequency divider design

A CMOS LC VCO with 3.2～6.1ghz Tuning Range