A Low Phase-Noise X-band MMIC VCO Using High-Linearity and Low-Noise Composite-Channel Al 0.3 Ga 0.7 N/Al 0.05 Ga 0.95 N/GaN HEMTs

Zhiqun Q. Cheng,Yong Cai,Jie Liu,Yugang Zhou,Kei May Lau,Kevin J. Chen

DOI: https://doi.org/10.1109/tmtt.2006.888942

IF: 4.3

2007-01-01

IEEE Transactions on Microwave Theory and Techniques

Abstract:A low phase-noise X-band monolithic-microwave integrated-circuit voltage-controlled oscillator (VCO) based on a novel high-linearity and low-noise composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistor (HEMT) is presented. The HEMT has a 1 mu m x 100 mu m gate. A planar inter-digitated metal-semiconductor-metal varactor is used to tune the VCO's frequency. The polyimide dielectric layer is inserted between a metal and GaN buffer to improve the Q factor of spiral inductors. The VCO exhibits a frequency tuning range from 9.11 to 9.55 GHz with the varactor's voltage from 4 to 6 V, an average output power of 3.3 dBm, and an average efficiency of 7% at a gate bias of -3 V and a drain bias of 5 V. The measured phase noise is -82 dBc/Hz and -110 dBc/Hz at offsets of 100 kHz and 1 MHz at a varactor's voltage (V-tune) = 5 V. The phase noise is the lowest reported thus far in VCOs made of GaN-based HEMTs. In addition, the VCO also exhibits the minimum second harmonic suppression of 47 dBc. The chip size is 1.2 x 1.05 mm(2).