Influence of various doping ratio on optical and electronic performance of blue organic light-emitting diodes

Jian Zhong,Junsheng Yu,Lei Zhang,Yadong Jiang,Hongbin Wang,Lin Hui
DOI: https://doi.org/10.1117/12.783132
2007-01-01
Abstract:A novel kind of multilayer blue organic light-emitting diode (OLED) was developed via vacuum thermal deposition method. Host and dopant materials were co-deposited to fabricate as an emissive layer (EML) simultaneously. The film thickness of each layer was controlled with a quartz crystal microbalance. Typical device structure was ITO/CuPc (20 nm)/NPB (60 nm)/B-host (40 mu) : dopant (X wt%)/Alq(3) (20 nm)/LiF (1 nm)/Al (100 nm), where X% stands for the doping concentration in the EML of OLED. The weight ratio was changed from 1% to 4%. Optical and electronic performance including current, bias voltage, brightness, efficiency and spectra of the devices varied with doping concentration was characterized. The results showed the turn-on voltage of the device with 1% doping concentration was lower than that of others, which was only 3.5 V. When X wt% was 3%, the brightness of the device reached to be 9,500 cdm(-2) at a driving voltage of 20 V with blue emission spectrum peak 472 nm corresponding to the CIE coordinates of x=0.147, y=0.215 and a maximum luminance efficiency of 2.92 lmW(-1). The brightness of the device increased linearly with the bias voltage ranging from 3.5 to 52 V. The results also showed that the doping OLED was very steady under high driving voltage at ambient atmosphere.
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