Improvement of Development Property of IP Resist on Photomask by Plasma Surface Pretreatment

Yong LI,Xiu-lan CHENG
2007-01-01
Abstract:IP resist is a kind of photoresist which is usually used for 0.25 μm photomask in I-line process. However, the poor surface hydrophilicity of IP resist easily results in underdevelopment during development. A method used for improvement of the development property of IP resist was introduced, i.e., the surface of IP resist was properly pretreated by plasma before development so that its surface roughness was increased and its development property was improved. The experimental results show that both the hydrophilicity and the uniformity of development are effectively improved by this method. The static contact angle can be decreased from 77° to 45° while the thickness of IP resist only reduces 3 nm-5 nm. At the same time, the number of the chromium opaque defects caused by surface particle contamination can be also reduced, i.e., the number of defects on per mask decreased from 4 to 0.53. Besides these, this method is helpful to improve the pattern resolution and yield of the photomasks with dense patterns or square holes patterns, and the loss of yield can be reduced from 14% to 2%.
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