Abstract:Two micrometer waveband has attracted much attention due to even-increasing data transmission and sensing needs. Waveguide-integrated photodetectors have been widely studied as one of the core devices in on-chip optical systems. However, bulk materials for photon-to-electron transition at 2 mu m waveband such as HgCdTe or III-V compounds are incompatible with current integrated photonic platforms limited by lattice mismatch. As an alternative, van der Waals (vdW) materials, with exceptional optoelectronic characteristics, such as high mobility and strong light-matter interaction, can be freely integrated with arbitrary photonic platforms through vdW forces. In recent years, highly stable and narrow bandgap tellurium (Te) has been applied to construct mid-infrared detection with high responsivity and large bandwidth. However, the large shot noise of Te photodetectors results from a large dark current, limiting the detection of the weak light signals. Here, we introduce intrinsic n-type molybdenum ditelluride (MoTe2) to construct a PN heterojunction with Te, thereby dark current can be suppressed as a result of the depletion layer at the interface, which is the first time to integrate Te-based heterojunction on commercial silicon photonic platform above communication waveband. As a result, the detectivity of our device reaches 2 x 10(9) cmHz(1/2)W-1. Simultaneously, the obtained waveguide-integrated Te/MoTe2 heterostructure photodetector possesses a responsivity of 94.16 mAW-1 and a bandwidth of 36 MHz, benefiting from both evanescent wave enhancement and narrow channel for collection photoinduced carriers. The demonstrated waveguide-integrated Te/MoTe2 heterostructure photodetector is promising for applications in next-generation high-performance sensing and communication networks at 2 mu m waveband.

Design and Fabrication of a Novel Monothically Integrated Dual-Wavelength Tunable Photodetector

A Monothically Integrated Dual-Wavelength Tunable Photodetector Based on a Taper GaAs Substrate

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches

Low-Noise Te/MoTe2 Heterojunction Waveguide-Integrated Photodetector

Wavelength-Tunable Multispectral Photodetector With Both Ultraviolet and Near-Infrared Narrowband Detection Capability

Hybrid Integrated Velocity Matched Travelling-Wave InP/InGaAs Photodetectors with Silicon Nitride Waveguides

Integrated High-Performance Two-Stage Ratiometric Wavelength Monitors on Silicon

Design and Optimization of InAs Waveguide-Integrated Photodetectors on Silicon Via Heteroepitaxial Integration for Mid-Infrared Silicon Photonics

Dual-band photodetector based on mixed-dimensional WSe2/GaN junction

Design for New Structure Inas/Inxga1-Xsb Superlattice Two-Color-Short and Long Wavelength Infrared Photodetector

InP-based GaAsSb/AlGaAsSb/T2SL barrier-type low-bias tunable dual-band NIR/eSWIR photodetectors

Integration of N-Type and P-Type Quantum-Well Infrared Photodetectors for Sequential Multicolor Operation

Self-powered filterless narrowband AgNWs@ZnO:Ga/AlN/InGaN heterojunction photodetector for ultraviolet light intensimeter application

Tunable mid-infrared receiving sensors made of InxGa1-xAs/AlyGa1-yAs/AlzGa1-zAs asymmetric step quantum-well structure

Tunable Mid-Infrared Photodetectors Employing Stark Shifts of Intersubband Transitions in In0.05Ga0.95As/Al0.32Ga0.68As/Al0.45Ga0.55As Asymmetric Step Quantum Wells

High-performance (Al 0.4 Ga 0.6 ) 2 O 3 /Al 0.32 Ga 0.68 N-based UVC/UVB tunable dual-band photodetectors

Dual-color charge-sensitive infrared phototransistors with dynamic optical gate

A Monolithic Optoelectronic Integrated Circuit of InP P-I-n/double HBTs Through Transfer-Printing Fabrication

Design and fabrication of a high-performance evanescently coupled waveguide photodetector

Low Dark Current HgCdTe Long Wavelength Infrared Photodiodes with Bandgap Gradient Multi-Layer Heterojunction

A Design Strategy for Low‐Cost Single/Dual‐Band Photodetector: Bulk Heterojunction and Interface Engineering