Electrical properties of permalloy/Si (100) thin films
A. Kharmouche,O. Cherrad
DOI: https://doi.org/10.1007/s10854-024-12482-y
2024-04-14
Journal of Materials Science Materials in Electronics
Abstract:Series of Permalloy thin films have been deposited onto Si (100) substrates by means of thermal heating evaporation under vacuum. The thickness films have been varied from 174 to 307 nm. The electrical resistivity, the magnetoresistance, and the electron mobility are studied as functions of film thickness. X-ray diffraction technique, scanning electronic microscope, atomic force microscope, and Hall effect measurement systems have been used to characterize the samples. All the films crystallize in the face-centered cubic structure with preferred orientation, and crystallite sizes have been found to increase with thickness. The electrical resistivity as well as the magnetoresistance have been found to decrease with thickness increasing, whereas the mobility increases.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied