Low-temperature and pressureless sintering technology for high-performance and hightemperature interconnection of semiconductor devices

Guoquan Lu,Jesus Noel Calata,Guangyin Lei,Xu Chen
DOI: https://doi.org/10.1109/ESIME.2007.360066
2007-01-01
Abstract:We present an interconnect technology based on low-temperature and pressureless sintering of a nanoscale metal paste to achieve high-performance and high-temperature packaging of semiconductor devices. The nanoscale metal paste, consisting of nanoparticles of silver mixed in an organic binder/solvent vehicle, can be sintered at temperatures close to 275 degrees C. Measurements on electrical and thermal properties of the sintered die interconnect gave it at least five times better than the soldered or epoxied attachment. Die-shear tests of the sintered joints showed a bonding strength of about 25 MPa. The sintered joints exhibited excellent reliability in aging and temperature-cycling tests. Since silver melts at 961 degrees C, the sintered interconnect can be used for wide band gap semiconductor devices (SiC or GaN), which are operable over 300 degrees C where none of the existing solder alloys or epoxies can be used. In summary, the low-temperature sintering of nanoscale metal paste is shown to be a reliable, lead-free interconnect solution for high-temperature and high-performance packaging needs.
What problem does this paper attempt to address?