Abstract:Recently much attention has been paid to short wavelength lasers for use in high density information storage. It is widely accepted that ZnO is one of the most promising materials for producing an ultraviolet laser at room temperature due to its wide direct band gap (E_g=3.37 eV) and large excitonic binding energy of 60 meV. It has potential uses in optoelectronical systems such as light emitting diodes(LEDs), photodetectors, electroluminecence devices and solar cells. To obtain high quality ZnO thin films a variety of techniques may be used such as molecular beam epitaxy(MBE), metal organic chemical vapor deposition(MOCVD), magnetron sputtering, pulsed laser deposition, and so on. Among them, MOCVD provides the advantage of growing high-quality films due to its versatility in controlling the various thermodynamic interactions. ZnO has not only the same crystal structure as GaN, but also a larger exciton binding energy of 60 meV, which is 2.4 times that of GaN. This indicates that ZnO should be the most potential material to realize the next generation UV semiconductor laser. High quality ZnO films were deposited on c-Al_2O_3 substrate by the plasma-assisted metal-organic chemical vapor deposition. Strong optically pumped ultraviolet (UV) emission was observed. PL spectra under different excitation powers were performed. The PL intensity as a function of the excitation power, it is obvious that the PL intensity is linearly dependent on the excitation power. This indicates that the dominant photoluminescence of the sample should be the excitonic radiative recombination at room temperature.Optically pumped UV lasing spectrum of ZnO film was observed. The samples were optically pumped by a frequency-tripled mode-locked Nd∶YAG laser 355 nm emission, with 10 Hz repetition rate, and 15 ps pulse width. The pump beam was focused to a spot with diameter of about 25 μm on the surface of ZnO film. The threshold of lasing was as low as 0.28 μJ. From the lasing spectrum, we could find that the lasing peak has much narrow line-width less than 0.03 nm. In this paper, high quality ZnO films were grown on c-Al_2O_3 by MOCVD. Optimized growth condition was obtained by XRD and PL measurements. ZnO films were strongly c-oriented from XRD measurement. Optically pumped UV lasing was observed in all kinds of directions at room temperature. This was due to the self-formed resonance cavities.

Preparation of ZnO Thin Films by Pulsed Laser Deposition

The growth of nanoscale ZnO films by pulsed-spray evaporation chemical vapor deposition and their structural, electric and optical properties

Effect of Nucleation and Growth Kinetics on the Electrical and Optical Properties of Undoped ZnO Films

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

Room Temperature Growth and Properties of ZnO Films by Pulsed Laser Deposition

Optically Pumped Ultraviolet Lasing Property of ZnO Film

Electrochemical Deposition and Stimulated Emission of Zinc Oxide Thin Films

STRUCTURAL AND OPTICAL STUDIES OF ZnO FILMS GROWN AT LOW TEMPERATURE

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Pulsed Laser Reactive Ablation of (0001)-Textured ZnO Optical Waveguiding Films on Α-Sio2

Deep ultraviolet emission of ZnO films prepared by RF magnetron sputtering at changing substrate temperature

Preparation and Photoluminescence of ZnO with Nanostructure by Hollow-Cathode Discharge

Preparation of C-Axis Oriented ZnO Optical Waveguiding Films on Fused Silica by Pulsed Laser Reactive Ablation

Electrochemical Deposition and Characterization of Wide Band Semiconductor ZnO Thin Film

Photoluminescence and Optically Pumped Ultraviolet Lasing from Nanocrystalline ZnO Thin Films Prepared by Thermal Oxidation of High-Quality ZnS Thin Films

Characteristics of ZnO Films Prepared by Ultrasonic Spray Pyrolysis Method

Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn

Epitaxial Growth Of Zno Films On (100) And (001) Gamma-Lialo2 Substrates By Pulsed Laser Deposition

Characteristics of Zinc Oxide Thin Films on Al2O3 Substratesgrown by Pulsed Laser Deposition Method

Epitaxial growth of ZnO films on (100) and (001) γ-LiAlO 2 substrates by pulsed laser deposition