Abstract:Thin films of BaxSr1-xTiO3 (BST) serial materials have the advantages of adjustable tunability and are good candidates for the application in DRAM and microwave devices. However, these films usually have loss tangent higher than the order of 0.01 at microwave frequencies. To improve the crystal structures and suppress the microwave losses, an interlayer material with good microwave properties can be used. In this present work, a low loss Ba(Mg1/3Ta2/3)O-3 (BMT) thin buffer layer with varying thickness and its effect on the microwave properties of Ba0.4Sr0.6TiO3 thin films is investigated. Moreover, to overcome the spatial limit in the traditional microwave measurement, a novel technique, evanescent microwave probe (EMP) method, is used to directly probe the microwave dielectric properties of the films. This technique also provides the capability to study the dielectric mechanism in micro-scale region.Pulsed laser deposition technique was used to synthesize thin films. The films shows (111) preferably oriented growth of BST films with the introduction of BMT layer for the films grown on sapphire substrates. As the thickness of BMT increases, this behavior is more obvious. The microwave dielectric constants (epsilon) and dielectric losses (tan delta) of the films grown on sapphire substrates have been measured by EMP. The dielectric constants of BST thin films decrease monotonously with the increase of BMT thickness. In contrast, the tan delta shows a discontinuity variation when the BMT buffer layer is deposited for 10-20 minutes.

Microwave Performance Dependence of BST Thin Film Planar Interdigitated Varactors on Different Substrates

The Effect of Physical Design Parameters on the RF and Microwave Performance of the BST Thin Film Planar Interdigitated Varactors

The Rf/Microwave Performance Of The Planar Interdigitated Varactors Based On Ba0.6sr0.4tio3/Ba0.4sr0.6tio3 Double-Layer Thin Film

Barium Strontium Titanate Thin Film Varactors for Room-Temperature Microwave Device Applications

Performance and Characterization of Additively Manufactured BST Varactor Enhanced by Photonic Thermal Processing

High Frequency Characteristic of Ba1-xSxTiO3 Thin Film

Improvement of dielectric loss of doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices

Microwave Properties of BaO-Nd2O3-Sm2O3-TiO2 Thin Film

Enhanced electrical properties of multilayer Ba(Zr 0.2 Ti 0.8 )O 3 /Ba 0.6 Sr 0.4 TiO 3 /Ba(Zr 0.2 Ti 0.8 )O 3 thin films for tunable microwave applications

High tunabilty Ba 0.6 Sr 0.4 TiO 3 thin films fabricated on Pt–Si substrates with La 0.5 Sr 0.5 CoO 3 buffer layer

Enhanced Piezoresponse and Dielectric Properties for Ba1-XSrXTiO3 Composition Ultrathin Films by the High-Throughput Method

Recent Progress of (ba,sr)tio 3 Thin Films for Tunable Microwave Devices

Microwave Properties of Bst and Bst/Bmt Thin Films Grown on Sapphire Substrate by Evanescent Microwave Probe

Dielectric Characteristics of Bst/Bzt/Bst Multilayer

High Tunable Ba<SUB Align="right">0.5sr<sub Align="right">0.5tio<sub Align="right">3 Thin Film Deposited on Silicon Substrate with MgO Buffer Layer

Electrical Behavior of Y-doped Ba0.6Sr0.4TiO3 Thin Films

High Performance Distributed CPW Phase Shifters with Etched BST Thin Films on Ф 3″ LaAlO3 Substrates

Tunable Bandstop Filters Using Bst Varactor Chips

Robust Tunability and Newly Emerged Q Resonance of Ba 0.8 Sr 0.2 TiO 3 -Based Microwave Capacitors under Gamma Irradiations

Effects of post-deposition oxygen annealing on tuning properties of Ba 0.8Sr0.2TiO3 thin-film capacitors for microwave integrated circuits

High-Quality-Factor and Low-Temperature-Dependence SMR FBAR Based on BST Using MOD Method